mrf5s9100n Freescale Semiconductor, Inc, mrf5s9100n Datasheet - Page 2

• Manufacturer Part Number: mrf5s9100n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF5S9100NR1 MRF5S9100NBR1
2
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB
@ 0.01% Probability on CCDF
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Forward Transconductance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally input matched.
(V
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DS
GS
DS
DS
DS
= 68 Vdc, V
= 26 Vdc, V
= 10 Vdc, I
= 26 Vdc, I
= 10 Vdc, I
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 5 Vdc, V
= 10 Vdc, I
DS
D
D
D
D
GS
GS
= 400 μA)
= 950 mAdc)
= 6 Adc)
= 2.0 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(1)
Test Methodology
Characteristic
Test Conditions
(T
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 26 Vdc, I
Symbol
DQ
V
Rating
V
V
ACPR
I
I
I
C
DS(on)
C
GS(th)
GS(Q)
G
IRL
DSS
DSS
GSS
g
η
= 950 mA, P
3
oss
rss
fs
ps
D
Min
Package Peak Temperature
out
—
—
—
—
—
—
—
—
18
26
—
—
2
= 20 W Avg. N - CDMA, f = 880 MHz,
- 46.8
0.21
19.5
260
Typ
- 19
2.8
3.7
2.2
70
28
—
—
—
1C (Minimum)
7
IV (Minimum)
A (Minimum)
Class
Freescale Semiconductor
Max
- 45
3.5
0.3
10
—
—
—
—
—
—
- 9
1
1
RF Device Data
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
dBc
dB
dB
°C
pF
pF
%
S