mrf7s35120hs Freescale Semiconductor, Inc, mrf7s35120hs Datasheet - Page 6

• Manufacturer Part Number: mrf7s35120hs
• Description: N - Channel Enhancement - Mode Lateral Mosfet
• Manufacturer: Freescale Semiconductor, Inc

MRF7S35120HSR3
6
250
200
150
100
50
0
0
3300 MHz 25_C
3500 MHz −30_C
Figure 9. Pulsed Output Power versus
3100 MHz 25_C
5
P
3300 MHz −30_C
in
, INPUT POWER (WATTS) PULSED
V
Pulse Width = 100 μsec, Duty Cycle = 20%
DD
Input Power
10
= 32 Vdc, I
3500 MHz 85_C
3100 MHz −30_C
13.5
10.5
13.5
10.5
7.5
7.5
15
12
15
12
9
6
9
6
Figure 11. Pulsed Power Gain and Drain Efficiency
Figure 12. Pulsed Power Gain and Drain Efficiency
DQ
1
1
15
V
Pulse Width = 100 μsec, Duty Cycle = 20%
V
Pulse Width = 100 μsec, Duty Cycle = 20%
= 150 mA
3300 MHz 85_C
DD
DD
= 32 Vdc, I
= 32 Vdc, I
85_C
versus Output Power — 3300 MHz
versus Output Power — 3500 MHz
T
3500 MHz 25_C
3100 MHz 85_C
TYPICAL CHARACTERISTICS
T
25_C
C
25_C
85_C
C
20
P
P
= −30_C
out
out
= −30_C
DQ
DQ
, OUTPUT POWER (WATTS) PULSED
, OUTPUT POWER (WATTS) PULSED
= 150 mA, f = 3300 MHz
= 150 mA, f = 3500 MHz
G
10
ps
10
25
G
ps
13.5
10.5
7.5
15
12
η
η
9
6
Figure 10. Pulsed Power Gain and Drain Efficiency
D
D
1
V
Pulse Width = 100 μsec, Duty Cycle = 20%
DD
85_C
= 32 Vdc, I
85_C
85_C
25_C
versus Output Power — 3100 MHz
T
100
100
C
P
out
= −30_C
DQ
, OUTPUT POWER (WATTS) PULSED
−30_C
−30_C
= 150 mA, f = 3100 MHz
25_C
25_C
300
300
10
60
50
40
30
20
10
0
60
50
40
30
20
10
0
G
ps
η
D
Freescale Semiconductor
25_C
85_C
100
RF Device Data
−30_C
300
60
50
40
30
20
10
0