mrf7s35120hs Freescale Semiconductor, Inc, mrf7s35120hs Datasheet - Page 2

• Manufacturer Part Number: mrf7s35120hs
• Description: N - Channel Enhancement - Mode Lateral Mosfet
• Manufacturer: Freescale Semiconductor, Inc

MRF7S35120HSR3
2
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
and f = 3500 MHz, Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 25 ns Input Rise Time
Pulsed RF Performance (In Freescale Application Test Fixture, 50 ohm system) V
(24 W Avg.), f = 3100 MHz and f = 3500 MHz, Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 25 ns Input Rise Time
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Gate - Source Leakage Current
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Input Return Loss
Output Pulse Droop
Load Mismatch Tolerance
1. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
(V
(V
(500 μsec Pulse Width, 10% Duty Cycle)
(VSWR = 10:1 at all Phase Angles)
GS
DS
DS
DS
DD
GS
DS
DS
DS
= 32 Vdc, V
= 65 Vdc, V
= 10 Vdc, I
= 32 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 32 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 32 Vdc, V
= 5 Vdc, V
= 32 Vdc, I
= 10 Vdc, I
DS
D
D
D
GS
GS
GS
= 400 μAdc)
= 150 mAdc, Measured in Functional Test)
= 2.0 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
(1)
Characteristic
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 32 Vdc, I
VSWR - T
Symbol
DQ
V
DRP
V
V
I
I
I
C
DS(on)
C
GS(th)
GS(Q)
C
G
IRL
GSS
DSS
DSS
η
= 150 mA, P
oss
rss
iss
ps
D
DD
out
= 32 Vdc, I
10.5
Min
out
1.2
1.5
0.1
—
—
—
—
—
—
38
—
—
DQ
= 120 W Peak (24 W Avg.), f = 3100 MHz
No Degradation in Output Power
= 150 mA, P
0.17
0.87
Typ
464
214
- 15
1.9
2.4
0.3
12
40
—
—
—
1C (Minimum)
IV (Minimum)
A (Minimum)
Class
Freescale Semiconductor
out
= 120 W Peak
Max
13.5
2.7
0.3
10
—
—
—
—
—
- 8
1
1
3
RF Device Data
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dB
dB
dB
pF
pF
pF
%