gt80j101b TOSHIBA Semiconductor CORPORATION, gt80j101b Datasheet - Page 4

• Manufacturer Part Number: gt80j101b
• Description: Toshiba Insulated Gate Bipolar Transistor Silicon Channel Igbt
• Manufacturer: TOSHIBA Semiconductor CORPORATION

200
100
0.5
0.3
0.1
20
16
12
30
10
8
4
0
5
3
1
3
1
0
0
1
(Continuous )
(Pulsed)
* Single non-repetitive pulse Tc
Curves must be derated linearly with increase in
temperature.
I C max
t off
t on
I C max
t f
t r
10
Common emitter
R L
Tc
Collector-emitter voltage V CE (V)
3
Operation
80
25°C
1.88
20
Collector current I C (A)
V CE
Gate charge Q G
DC
Safe Operating Area
Switching time – I
10
V
10 ms *
1 ms *
30
CE
150 V
160
100
, V
50
30
GE
40
Q
25°C
50
240
100
G
Common emitter
V CC
R G
V GG
Tc
(nC)
C
25°C
60
33
300 V
15 V
300
100 s *
320
70
10 s *
1 s *
1000
80
4
30000
10000
5000
3000
1000
10
10
10
500
300
100
10
10
10
0.5
0.3
0.1
10
50
10
5
3
1
2
1
0
1
2
3
3
1
5
Common emitter
V GE
f
Tc
Common emitter
V CC
I C
V GG
Tc
5
10
1 MHz
25°C
Collector-emitter voltage V CE (V)
80 A
25°C
4
3
0 V
300 V
10
15 V
Gate resistance R G ( )
5
10
Switching time – R
Pulse width t w (s)
3
10
R
10
C
th (t)
30
2
V
50
30
10
CE
t
w
1
50
100
10
G
100
0
C oes
C ies
C res
Tc
GT80J101B
10
25 °C
1
300
2006-06-05
300
t off
t on
t r
t f
500
500
10
2