gt80j101b TOSHIBA Semiconductor CORPORATION, gt80j101b Datasheet
gt80j101b
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gt80j101b Summary of contents
Page 1
... A) C Symbol Rating Unit V 600 V CES GES 160 200 W C 3.5 T 150 ° 55~150 °C stg 0.8 N·m Symbol Rating Unit R 0.625 °C/W th (j-c) R 35.7 °C/W th (j-a) 1 GT80J101B Unit: mm JEDEC ? JEITA ? TOSHIBA 2-21F2C Weight: 9.75 g (typ.) 2006-06-05 ...
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... MHz ies CE GE Resistive load 300 (Note 2) t off 90 (off off 2 GT80J101B Min Typ. Max Unit 500 nA 1.0 mA 3.0 6.0 V 2.0 V 2.4 2.9 5500 pF 0.3 0.5 s 0.25 0.40 0.7 10% 90% 10 2006-06-05 ...
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... Gate-emitter voltage (sat) 4 Common emitter Case temperature Tc (°C) 3 GT80J101B V GE Common emitter Tc 40° Common emitter Tc 125° 120 ...
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... Collector-emitter voltage 1000 Pulse width t w (s) 4 GT80J101B G t off 100 300 500 ies C oes C res 30 50 100 300 500 ° ...
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... Reverse Bias SOA 300 100 125° 0 0.1 0 100 200 300 400 500 600 Collector-emitter voltage V CE (V) 700 5 GT80J101B 2006-06-05 ...
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... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 GT80J101B 030619EAA 2006-06-05 ...