gt60j323h TOSHIBA Semiconductor CORPORATION, gt60j323h Datasheet - Page 3

• Manufacturer Part Number: gt60j323h
• Description: Toshiba Insulated Gate Bipolar Transistor Silicon N Channel Igbt
• Manufacturer: TOSHIBA Semiconductor CORPORATION

120
100
120
100
3.5
2.5
1.5
0.5
80
60
40
20
80
60
40
20
3
2
1
0
0
0
-60
0
0
Common emitter
Tc=125℃
Common emitter
V
Common emitter
Tc=-４０℃
GE
Tc=125℃
Tc=-40℃
ｴﾐｯﾀ接地
ｴﾐｯﾀ接地
=１5V
ｴﾐｯﾀ接地
V
GE
=15V
Collector-emitter voltage V CE (V)
Collector-emitter voltage V CE (V)
-20
1
1
Case temperature Tc (°C)
V
20
CE (sat)
20
I
I
2
2
C
C
20
– V
– V
15
CE
CE
– Tc
15
3
60
10
3
10
I
C
=120A
V
9
GE
10
100
4
V
4
8
=6V
7.5
8.5
7
6.5
8
7.5
8.5
GE
9
80
=7V
60
30
5
140
5
3
120
100
120
100
80
60
40
20
80
60
40
20
0
0
0
0
Common emitter
Tc=25℃
Common emitter
V
CE
ｴﾐｯﾀ接地
ｴﾐｯﾀ接地
V
=5V
Tc=25℃
CE
=5V
Collector-emitter voltage V CE (V)
2
Gate-emitter voltage V GE (V)
1
Tc=125
4
2
I
I
C
20
C
– V
– V
6
15
CE
GE
25
3
10
8
V
-40
9
GE
GT60J323H
4
=7V
8
7.5
8.5
10
2006-11-01
5
12