gt60j323h TOSHIBA Semiconductor CORPORATION, gt60j323h Datasheet
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gt60j323h
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gt60j323h Summary of contents
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... T −55 to 150 °C stg Symbol Max Unit R 0.74 °C/W th (j-c) R 1.56 °C/W th (j-c) Marking TOSHIBA 60J323H JAPAN 1 GT60J323H Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2006-11-01 ...
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... di/dt = −100 A/μ 90 90 (off off 2 GT60J323H Min Typ. Max ― ― ±500 ― ― 1.0 3.0 ― 6.0 ― 2.1 2.9 ― 4800 ― 0.26 ― 0.39 ― 0.12 0.21 (Note 1) ― 0.41 ― 1.4 2.0 ― 0.1 ...
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... Collector-emitter voltage V CE (V) 120 Common emitter エミッタ接地 V =5V V =5V 8 100 6 100 140 3 GT60J323H I – 8.5 8 7 – Tc=125 25 - ...
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... T j ≤ 125° 1000 Ω 500 300 100 10000 1 (V) Collector-emitter voltage V 4 GT60J323H C – ies C oes C res 1 10 100 1000 (V) CE Switching Time – toff tr ...
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... 2 Forward current I 200 100 300 500 0 5 GT60J323H r – ( 25°C Diode stage IGBT stage − 3 − 2 − Pulse width t ( – ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 GT60J323H 20070701-EN 2006-11-01 ...