gt30j121 TOSHIBA Semiconductor CORPORATION, gt30j121 Datasheet - Page 4

• Manufacturer Part Number: gt30j121
• Description: Toshiba Insulated Gate Bipolar Transistor Silicon N Channel Igbt
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.03
0.01
0.03
0.01
0.3
0.1
0.3
0.1
0.3
0.1
10
10
30
10
3
1
3
1
3
1
1
1
1
Common emitter
V CC = 300 V
V GG = 15 V
I C = 30 A
(Note 1)
Common emitter
V CC = 300 V
V GG = 15 V
I C = 30 A
(Note 1)
Common emitter
V CC = 300 V
V GG = 15 V
I C = 30 A
(Note 2)
Switching time t
Switching time t
: Tc = 25°C
: Tc = 125°C
3
: Tc = 25°C
: Tc = 125°C
3
: Tc = 25°C
: Tc = 125°C
3
t d (on)
Switching loss E
t d (off)
E off
t on
t off
Gate resistance R
t f
Gate resistance R
Gate resistance R
t r
10
10
10
30
30
30
on
off
, t
, t
on
r
f
, t
, t
, E
G
G
G
100
100
100
d (off)
d (on)
off
(Ω)
(Ω)
(Ω)
– R
E on
– R
– R
300
300
300
G
G
G
1000
1000
1000
4
0.03
0.01
0.03
0.01
0.03
0.01
0.3
0.1
0.3
0.1
0.3
0.1
10
3
1
3
1
3
1
0
0
0
t d (on)
t d (off)
E off
Common emitter
V CC = 300 V
V GG = 15 V
R G = 24 Ω
(Note 1)
t on
t off
t r
t f
Switching time t
Switching time t
: Tc = 25°C
: Tc = 125°C
5
5
5
Switching loss E
Collector current I
Collector current I
Collector current I
10
10
10
15
15
15
on
off
, t
, t
on
r
f
, t
, t
, E
C
C
C
Common emitter
V CC = 300 V
V GG = 15 V
R G = 24 Ω
(Note 1)
Common emitter
V CC = 300 V
V GG = 15 V
R G = 24 Ω
(Note 2)
20
20
20
d (off)
d (on)
off
(A)
(A)
(A)
E on
: Tc = 25°C
: Tc = 125°C
: Tc = 25°C
: Tc = 125°C
– I
– I
– I
C
25
25
25
C
C
GT30J121
2006-11-01
30
30
30