gt30j121 TOSHIBA Semiconductor CORPORATION, gt30j121 Datasheet
gt30j121
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gt30j121 Summary of contents
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... GT30J121 = 2.0 V (typ.) (Ta = 25°C) Symbol Rating Unit V 600 V CES V ±20 V GES 170 150 ° −55 to 150 °C stg Symbol Max Unit R 0.735 °C/W th (j-c) 1 GT30J121 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.6 g (typ.) 2006-11-01 ...
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... off off 10 (off) 10 GT30J121 Min Typ. Max ― ― ±500 ― ― 1.0 3.5 ― 6.5 ― 2.0 2.45 ― 4650 ― ― 0.09 ― ― 0.07 ― ― 0.24 ― ― 0.30 ― ― ...
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... Gate-emitter voltage Gate-emitter voltage V 4 Common emitter −60 −20 Case temperature Tc (°C) 3 GT30J121 V – Common emitter Tc = −40° ( – Common emitter Tc = 125° ...
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... Switching loss 0.3 E off 0.1 0.03 0.01 300 1000 GT30J121 , – (on Collector current I ( – I off f d (off) C Common emitter 300 Ω ...
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... T j ≤ 125° Ω 0.1 300 1000 1 (V) Collector-emitter voltage 25° GT30J121 – 200 300 100 120 160 200 Gate charge Q (nC) G Reverse Bias SOA ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 GT30J121 20070701-EN 2006-11-01 ...