cy27h010 Cypress Semiconductor Corporation., cy27h010 Datasheet

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cy27h010

Manufacturer Part Number
cy27h010
Description
128k X 8 High-speed Cmos Eprom
Manufacturer
Cypress Semiconductor Corporation.
Datasheet

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Features
Functional Description
The CY27H010 is a high-performance, 1-megabit CMOS
EPROM organized in 128 Kbytes. It is available in indus-
Cypress Semiconductor Corporation
• CMOS for optimum speed/power
• High speed
• Low power
• Byte-wide memory organization
• 100% reprogrammable in thewindowed package
• EPROM technology
• Capable of withstanding >2001V static discharge
• Available in
Logic Block Diagram
— t
— t
— 275 mW max.
— Less than 85 mW when deselected
— 32-pin PLCC
— 32-pin TSOP-I
— 32-pin, 600-mil plastic or hermetic DIP
— 32-pin hermetic LCC
AA
AA
A
A
A
A
A
A
A
CE
OE
A
16
A
A
10
11
12
13
14
15
A
A
A
A
A
A
A
9
7
8
0
1
2
3
4
5
6
= 25 ns max. (commercial)
= 35 ns max. (military)
DECODER
ADDRESS
OUTPUT ENABLE
DECODER
PROGRAMMABLE
POWER DOWN
ARRAY
3901 North First Street
MULTIPLEXER
128K x 8 High-Speed CMOS EPROM
try-standard 32-pin, 600-mil DIP, LCC, PLCC, and TSOP-I
packages. These devices offer high-density storage com-
bined with 40-MHz performance. The CY27H010 is available
in windowed and opaque packages. Windowed packages al-
low the device to be erased with UV light for 100% re-
programmability.
The CY27H010 is equipped with a power-down chip enable
(CE) input and output enable (OE). When CE is deasserted,
the device powers down to a low-power stand-by mode. The
OE pin three-states the outputs without putting the device into
stand-by mode. While CE offers lower power, OE provides a
more rapid transition to and from three-stated outputs.
The memory cells utilize proven EPROM floating-gate technol-
ogy and byte-wide intelligent programming algorithms. The
EPROM cell requires only 12.75 V for the supervoltage and
low programming current allows for gang programming. The
device allows for each memory location to be tested 100%,
because each location is written to, erased, and repeatedly
exercised prior to encapsulation. Each device is also tested
for AC performance to guarantee that the product will meet DC
and AC specification limits after customer programming.
The CY27H010 is read by asserting both the CE and the OE
inputs. The contents of the memory location selected by the
address on inputs A
H010–1
O
O
O
O
O
O
O
O
0
1
2
3
4
5
6
7
San Jose
Pin Configurations
16
–A
0
August 1994 – Revised March 1997
O
A
A
A
A
A
A
A
A
will appear at the outputs O
7
6
5
4
3
2
1
0
0
GND
V
A
A
A
O
O
O
A
A
A
A
A
A
A
A
PP
CA 95134
16
15
12
7
6
5
4
3
2
1
0
0
1
2
5
6
7
8
9
10
11
12
13
14151617
4
LCC/PLCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Top View
Top View
3 2 1
DIP
32
181920
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
31
CY27H010
30
29
28
27
26
25
24
23
22
21
V
PGM
NC
A
A
A
A
A
OE
A
CE
O
O
O
O
O
CC
14
13
8
9
11
10
7
6
5
4
3
fax id: 3023
408-943-2600
A
A
A
A
A
OE
A
CE
O
14
13
8
9
11
10
7
H010–2
H010–3
7
–O
0
.

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cy27h010 Summary of contents

Page 1

... Each device is also tested for AC performance to guarantee that the product will meet DC and AC specification limits after customer programming. The CY27H010 is read by asserting both the CE and the OE inputs. The contents of the memory location selected by the address on inputs A Pin Configurations ...

Page 2

... Com’l 12 Mil Com’l 75 Mil Com’l 15 Mil UV Erasure................................................... 7258 Wsec/cm Static Discharge Voltage ........................................... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current ..................................................... >200 mA Operating Range Range Commercial [3] Industrial [4] Military 2 CY27H010 OE/VFY ...

Page 3

... Test Conditions MHz 5. 318 5V 3.0V R2 GND 5 pF 197 INCLUDING JIG AND SCOPE (b) H010–5 1.91V 27H010–25 Min. Max CY27H010 27H010–25 27H010–30 27H010–35 Min. Max. Min. Max. 2.4 2.4 0.45 0.45 2.0 V +0.5 2 0.8 0.8 –10 +10 –10 +10 –10 +10 – ...

Page 4

... Erasure Characteristics Wavelengths of light less than 4000 Angstroms begin to erase the CY27H010 in the windowed package. For this reason, an opaque label should be placed over the window if the EPROM is exposed to sunlight or fluorescent lighting for extended pe- riods of time. The recommended dose of ultraviolet light for erasure is a wavelength of 2537 Angstroms for a minimum dose (UV inten- sity multiplied by exposure time Wsec/cm2 ...

Page 5

... ILP IHP ILP ILP ILP IHP IHP CY27H010 Min. Max. Unit 12 3 –0.5 0.4 V 6.0 6 Data Dout High High ...

Page 6

... AMBIENT TEMPERATURE ( C) OUTPUT SOURCE CURRENT vs. OUTPUT VOLTAGE –100 –80 –60 –40 –20 0.0 0.0 1.0 2.0 3.0 4.0 OUTPUT VOLTAGE (V) 6 CY27H010 OUTPUT SOURCE CURRENT vs. OUTPUT VOLTAGE 1.25 V =5.5V 1 MHz 1.15 1.1 1.05 1.0 0.95 0.9 0.85 0.8 6 –100 – 100 AMBIENT TEMPERATURE ( C) OUTPUT SINK CURRENT vs. OUTPUT VOLTAGE 120 100 ...

Page 7

... CY27H010–30PC CY27H010–30WC CY27H010–30ZC 35 CY27H010–35JC CY27H010–35PC CY27H010–35WC CY27H010–35ZC CY27H010–35WMB CY27H010–35QMB Note: 10. Most of the above products are available in industrial temperature range. Contact a Cypress representative for specifications and product availability. MILITARY SPECIFICATIONS Group A Subgroup Testing ...

Page 8

... Package Diagrams 32-Lead Plastic Leaded Chip Carrier J65 32-Pin Windowed Rectangular Leadless Chip Carrier MIL-STD-1835 C-12 32-Lead (600-Mil) Molded DIP P19 8 CY27H010 ...

Page 9

... The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. 32-Lead (600-Mil) Windowed CerDIP W20 CY27H010 ...

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