mtd12n06ezl ON Semiconductor, mtd12n06ezl Datasheet - Page 6

• Manufacturer Part Number: mtd12n06ezl
• Description: Tmos Power Fet 12 Amperes 60 Volts
• Manufacturer: ON Semiconductor

6
100
0.1
10
1
0.1
0.01
0.1
1.0E−05
V
SINGLE PULSE
T
1
Figure 11. Maximum Rated Forward Biased
GS
C
= 25 C
= 20 V
D = 0.5
0.2
0.1
V
DS
SINGLE PULSE
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Safe Operating Area
0.01
1
1.0E−04
0.02
dc
10 ms
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
0.05
1 ms
LIMIT
100 s
Figure 14. Diode Reverse Recovery Waveform
10
I
S
1.0E−03
10 s
SAFE OPERATING AREA
Figure 13. Thermal Response
t
p
100
di/dt
t
a
t, TIME (s)
1.0E−02
t
rr
P
(pk)
t
b
I
S
Motorola TMOS Power MOSFET Transistor Device Data
DUTY CYCLE, D = t
75
60
45
30
15
0.25 I
0
25
t
1
Figure 12. Maximum Avalanche Energy versus
S
t
2
T
1.0E−01
J
, STARTING JUNCTION TEMPERATURE ( C)
50
Starting Junction Temperature
1
/t
TIME
2
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
75
J(pk)
JC
(t) = r(t) R
− T
C
1.0E+00
= P
(pk)
100
JC
1
R
JC
(t)
I
D
125
= 12 A
1.0E+01
150