mtd4n20e Freescale Semiconductor, Inc, mtd4n20e Datasheet - Page 3

• Manufacturer Part Number: mtd4n20e
• Description: Tm Data Sheet Tmos E-fet.tm Power Field Effect Transistor Dpak For Surface Mount
• Manufacturer: Freescale Semiconductor, Inc

Motorola TMOS Power MOSFET Transistor Device Data
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
2.5
2.0
1.5
1.0
0.5
– 50
7
6
5
4
3
2
1
0
0
8
0
0
0
Figure 3. On–Resistance versus Drain Current
V GS = 10 V
V GS = 10 V
I D = 4 A
T J = 25°C
– 25
Figure 5. On–Resistance Variation with
1
Figure 1. On–Region Characteristics
2
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
T J , JUNCTION TEMPERATURE (°C)
2
0
4
I D , DRAIN CURRENT (AMPS)
and Temperature
25
3
Temperature
T J = 100°C
6
– 55°C
25°C
V GS = 10 V
50
4
8
TYPICAL ELECTRICAL CHARACTERISTICS
5
75
10
100
6
9 V
12
125
7
6 V
8 V
7 V
5 V
150
14
8
100
2.8
2.4
2.0
1.2
0.8
0.4
1.6
10
7
6
5
4
3
2
1
0
0
8
1
2
0
0
Figure 4. On–Resistance versus Drain Current
T J = 25°C
V GS = 0 V
V DS ≥ 10 V
1
Figure 6. Drain–To–Source Leakage
3
Figure 2. Transfer Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
50
2
Current versus Voltage
4
I D , DRAIN CURRENT (AMPS)
and Gate Voltage
3
100
T J = 125°C
5
V GS = 10 V
100°C
25°C
4
15 V
6
150
5
T J = – 55°C
7
MTD4N20E
6
200
100°C
8
7
25°C
3
250
9
8