mtd4n20e Freescale Semiconductor, Inc, mtd4n20e Datasheet

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mtd4n20e

Manufacturer Part Number
mtd4n20e
Description
Tm Data Sheet Tmos E-fet.tm Power Field Effect Transistor Dpak For Surface Mount
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
TMOS
Power Field Effect Transistor
DPAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
 Motorola, Inc. 1995
MAXIMUM RATINGS
Motorola TMOS Power MOSFET Transistor Device Data
Drain–Source Voltage
Drain–Gate Voltage (R GS = 1.0 M )
Gate–Source Voltage — Continuous
Drain Current — Continuous
Drain Current
Drain Current
Total Power Dissipation @ T C = 25 C
Total Power Dissipation @ T A = 25 C, when mounted to minimum recommended pad size
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting T J = 25 C
Thermal Resistance — Junction to Case
Thermal Resistance
Thermal Resistance
Maximum Temperature for Soldering Purposes, 1/8 from case for 10 seconds
This advanced TMOS E–FET is designed to withstand high
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I DSS and V DS(on) Specified at Elevated Temperature
Surface Mount Package Available in 16 mm, 13–inch/2500
Unit Tape & Reel, Add –T4 Suffix to Part Number
Derate above 25 C
(V DD = 80 Vdc, V GS = 10 Vdc, I L = 4.0 Apk, L = 10 mH, R G = 25 )
— Continuous @ 100 C
— Single Pulse (t p
E-FET.
— Junction to Ambient
— Junction to Ambient, when mounted to minimum recommended pad size
— Non–repetitive (t p
(T C = 25 C unless otherwise noted)
Data Sheet
10 s)
Rating
10 ms)
G
D
S
Symbol
T J , T stg
V GSM
V DGR
V DSS
R JC
R JA
R JA
V GS
E AS
I DM
P D
T L
I D
I D
MTD4N20E
CASE 369A–13, Style 2
TMOS POWER FET
R DS(on) = 1.2 OHM
Motorola Preferred Device
– 55 to 150
4.0 AMPERES
200 VOLTS
Value
0.32
1.75
3.13
71.4
200
200
100
260
4.0
2.6
Order this document
12
40
80
20
40
DPAK
by MTD4N20E/D
Watts
Watts
W/ C
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
C/W
mJ
C
C
1

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mtd4n20e Summary of contents

Page 1

... Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola TMOS Power MOSFET Transistor Device Data  Motorola, Inc. 1995 D G Rating 10 ms) Order this document by MTD4N20E/D MTD4N20E Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 200 VOLTS R DS(on) = 1.2 OHM  CASE 369A–13, Style 2 ...

Page 2

... MTD4N20E ELECTRICAL CHARACTERISTICS ( 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage ( Vdc 0.25 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( 200 Vdc Vdc 200 Vdc Vdc 125°C) Gate–Body Leakage Current ( ± 20 Vdc ...

Page 3

... Figure 4. On–Resistance versus Drain Current 100 100 125 150 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–To–Source Leakage MTD4N20E – 55°C 25°C 100° ...

Page 4

... MTD4N20E Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...

Page 5

... DM ), the energy rating is specified at rated continuous current ( accordance with industry custom. The energy rating must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at currents below rated continuous I D can safely be assumed to equal the values indicated. MTD4N20E t d(off) t d(on GATE RESISTANCE (OHMS) 0 ...

Page 6

... MTD4N20E 100 SINGLE PULSE 25°C 10 1.0 0.1 R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 1 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area 1 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 1.0E–05 1.0E–04 Figure 14. Diode Reverse Recovery Waveform 6 SAFE OPERATING AREA 80 60 ...

Page 7

... Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. MTD4N20E Board Material = 0.0625″ G–10/FR– Copper 25°C 5.0 Watts ...

Page 8

... MTD4N20E Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. Solder stencils are used to screen the optimum amount. These stencils are typically 0.008 inches thick and may be made of brass or stainless steel. For packages such as the SC–59, SC– ...

Page 9

... SOLDER IS LIQUID FOR SECONDS 100°C 140°C (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES Figure 17. Typical Solder Heating Profile MTD4N20E STEP 6 STEP 7 VENT COOLING 205° TO 219°C PEAK AT SOLDER JOINT T MAX 9 ...

Page 10

... D 0.027 0.035 0.69 0.88 E 0.033 0.040 0.84 1.01 F 0.037 0.047 0.94 1.19 G 0.180 BSC 4.58 BSC H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.102 0.114 2.60 2.89 L 0.090 BSC 2.29 BSC R 0.175 0.215 4.45 5.46 S 0.020 0.050 0.51 1.27 U 0.020 ––– 0.51 ––– V 0.030 0.050 0.77 1.27 Z 0.138 ––– 3.51 ––– MTD4N20E/D ...

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