bsh108-02 NXP Semiconductors, bsh108-02 Datasheet
bsh108-02
Related parts for bsh108-02
bsh108-02 Summary of contents
Page 1
... N-channel enhancement mode field-effect transistor Rev. 02 — 25 October 2000 M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: BSH108 in SOT23. 2. Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications ...
Page 2
... 100 Figure pulsed Figure Figure pulsed Rev. 02 — 25 October 2000 BSH108 Typ Max Unit 30 V 1.9 A 0.83 W 150 C 77 120 m 102 140 m Min Max Unit ...
Page 3
... I der (%) 125 150 175 der Fig 2. Normalized continuous drain current as a function of solder point temperature Rev. 02 — 25 October 2000 BSH108 03aa25 120 100 100 125 150 ------------------ - 100% ...
Page 4
... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 07652 Product specification N-channel enhancement mode field-effect transistor Conditions mounted on a printed circuit board; minimum footprint Rev. 02 — 25 October 2000 BSH108 Value Unit Figure 4 150 K/W 350 K/W 03aa79 ...
Page 5
... MHz; Figure 0. Figure /dt = 100 Rev. 02 — 25 October 2000 BSH108 Min Typ Max Unit 1 0.5 V 3.2 V 0.01 1 100 nA 77 ...
Page 6
... 3 3 --------------------------- - R DSon 25 C Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 02 — 25 October 2000 BSH108 03aa83 > DSon 4.5 4 3.5 3 2.5 2 1.5 150 0 0.5 1 1 ...
Page 7
... 150 C 3 MHz DSon GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 02 — 25 October 2000 BSH108 03aa36 min typ max 0.5 1 1 (V) ...
Page 8
... Product specification N-channel enhancement mode field-effect transistor 03aa85 1 Fig 14. Gate-source voltage as a function of gate charge; typical values. Rev. 02 — 25 October 2000 BSH108 03ab10 0 ...
Page 9
... scale 3.0 1.4 2.5 0.45 1.9 0.95 2.8 1.2 2.1 0.15 REFERENCES JEDEC EIAJ TO-236AB Rev. 02 — 25 October 2000 BSH108 detail 0.55 0.2 0.1 0.45 EUROPEAN ISSUE DATE PROJECTION 97-02-28 99-09-13 © Philips Electronics N.V. 2000. All rights reserved. SOT23 ...
Page 10
... Product specification; second version; supersedes Rev.01 of 20000906. Correction to diode I 01 20000906 - Product specification. 9397 750 07652 Product specification N-channel enhancement mode field-effect transistor ; see Table 3 “Limiting values” S Rev. 02 — 25 October 2000 BSH108 © Philips Electronics N.V. 2000. All rights reserved ...
Page 11
... Rev. 02 — 25 October 2000 BSH108 Philips Semiconductors assumes no © Philips Electronics N.V. 2000 All rights reserved. ...
Page 12
... United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 Internet: http://www.semiconductors.philips.com (SCA70) Rev. 02 — 25 October 2000 BSH108 © Philips Electronics N.V. 2000. All rights reserved ...
Page 13
... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 25 October 2000 Document order number: 9397 750 07652 N-channel enhancement mode field-effect transistor Printed in The Netherlands BSH108 ...