psmn004-55w NXP Semiconductors, psmn004-55w Datasheet - Page 4

• Manufacturer Part Number: psmn004-55w
• Description: Psmn004-55w N-channel Logic Level Trenchmos Tm Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
October 1999
N-channel logic level TrenchMOS
100
1000
100
ID% = 100 I
90
80
70
60
50
40
30
20
10
100
90
80
70
60
50
40
30
20
10
0
10
0
I
Fig.2. Normalised continuous drain current.
1
D
0
0
1
Normalised Current Derating, ID (%)
& I
Normalised Power Derating, PD (%)
Fig.3. Safe operating area. T
Peak Pulsed Drain Current, IDM (A)
RDS(on) = VDS/ ID
Fig.1. Normalised power dissipation.
DM
25
25
= f(V
PD% = 100 P
D
Mounting Base temperature, Tmb (C)
Mounting Base temperature, Tmb (C)
/I
D 25 ˚C
DS
Drain-Source Voltage, VDS (V)
50
50
); I
DM
= f(T
single pulse; parameter t
75
75
D.C.
D
mb
/P
10
); conditions: V
D 25 ˚C
100
100
= f(T
125
125
mb
mb
= 25 ˚C
)
tp = 10 us
150
150
GS
100 us
1 ms
10 ms
100 ms
5 V
100
p
175
175
transistor
4
0.001
100
0.018
0.016
0.014
0.012
0.008
0.006
0.004
0.002
Fig.5. Typical output characteristics, T
0.01
90
80
70
60
50
40
30
20
10
0.02
0.01
Fig.6. Typical on-state resistance, T
0.1
0
1
1E-06
0
0
Drain Current, ID (A)
0
Drain-Source On Resistance, RDS(on) (Ohms)
Transient thermal impedance, Zth j-mb (K/W)
10 V
0.1
Fig.4. Transient thermal impedance.
0.05
2 V
0.02
0.2
D = 0.5
0.2
10
2.1 V
single pulse
Z
1E-05
th j-mb
0.4
VGS = 10V
20
2.2 V
= f(t); parameter D = t
Drain-Source Voltage, VDS (V)
0.6
30
1E-04
Drain Current, ID (A)
R
2.3 V
Pulse width, tp (s)
I
DS(ON)
0.8
D
40
= f(V
1E-03
50
= f(I
1
2.4 V
DS
)
60
1.2
D
P
PSMN004-55W
D
)
1E-02
Product specification
2.5 V
70
1.4
tp
T
D = tp/T
80
p
VGS = 10V
1E-01
1.6
/T
Tj = 25 C
j
j
= 25 ˚C .
Tj = 25 C
= 25 ˚C .
90
1.8
Rev 1.100
2.4 V
5 V
2.2 V
2.1 V
2.5 V
2.3 V
2 V
1E+00
100
2