psmn004-60p NXP Semiconductors, psmn004-60p Datasheet - Page 7

• Manufacturer Part Number: psmn004-60p
• Description: N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 09156
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
V GS(th)
(V)
I
V
D
GS
= 1 mA; V
5
4
3
2
1
0
junction temperature.
-60
= 0 V; f = 1 MHz
DS
= V
0
GS
60
max
typ
min
(pF)
C
10 5
10 4
10 3
10 2
120
10 -1
T j (
o
03aa32
C)
180
Rev. 01 — 26 April 2002
1
N-channel enhancement mode field-effect transistor
Fig 10. Sub-threshold drain current as a function of
(A)
10
I D
T
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
j
= 25 C; V
gate-source voltage.
0
V DS (V)
03ah87
DS
PSMN004-60P/60B
10 2
= 5 V
C iss
C oss
C rss
2
min
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
typ
4
max
V GS (V)
03aa35
6
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