stq1hnc60 STMicroelectronics, stq1hnc60 Datasheet - Page 2

• Manufacturer Part Number: stq1hnc60
• Description: N-channel 600v - 7ohm - 0.4a To-92 Powermesh??ii Mosfet
• Manufacturer: STMicroelectronics

STQ1HNC60
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
2/6
Rthj-case
Rthj-amb
V
Symbol
Symbol
Symbol
Symbol
R
V
(BR)DSS
I
I
C
DS(on)
C
E
GS(th)
C
I
GSS
DSS
g
AR
T
oss
AS
rss
iss
fs
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient Max
(Surface Mounted)
Maximum Lead Temperature For Soldering Purpose
Parameter
Parameter
Parameter
j
DS
= 25 °C, I
= 0)
GS
= 0)
D
= I
j
AR
max)
Parameter
, V
DD
I
V
V
V
V
V
V
I
D
D
V
= 50 V)
DS
DS
GS
DS
GS
DS
DS
= 250 µA, V
= 0.4 A
= Max Rating
= Max Rating, T
= ± 30V
= V
= 10V, I
> I
= 25V, f = 1 MHz, V
D(on)
Test Conditions
Test Conditions
Test Conditions
GS
, I
D
x R
D
= 0.4 A
GS
= 250 µA
DS(on)max,
= 0
C
= 125 ° C
GS
= 0
Min.
Min.
Min.
600
2
35.7
300
60
Max Value
Typ.
Typ.
Typ.
1.25
100
160
0.4
3.8
26
3
7
Max.
±100
Max.
Max.
50
1
4
8
°C/W
°C/W
°C
Unit
Unit
Unit
Unit
mJ
µA
µA
nA
pF
pF
pF
A
V
V
S