ntd4815n ON Semiconductor, ntd4815n Datasheet - Page 5

• Manufacturer Part Number: ntd4815n
• Description: Power Mosfet 30 V, 35 A, Single N-channel, Dpak/ipak
• Manufacturer: ON Semiconductor

1000
1000
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
100
100
1500
1400
1300
1200
1000
1100
10
0.1
10
900
800
700
600
500
400
300
200
100
1
1
0
1
0.1
10
Figure 11. Maximum Rated Forward Biased
C
C
t
t
V
d(on)
rss
iss
V
d(off)
DS
DS
t
t
f
Figure 9. Resistive Switching Time
5
r
V
SINGLE PULSE
T
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
= 0 V
C
GS
GS
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
R
= 25°C
G
= 20 V
, GATE RESISTANCE (OHMS)
R
THERMAL LIMIT
PACKAGE LIMIT
0
DS(on)
Safe Operating Area
V
C
V
1
GS
rss
DS
= 0 V
5
LIMIT
10
10
15
10
TYPICAL PERFORMANCE CURVES
V
I
V
D
20
DD
GS
= 30 A
T
= 15 V
= 11.5 V
J
10 ms
1 ms
100 ms
10 ms
dc
= 25°C
http://onsemi.com
25
C
C
NTD4815N
iss
oss
100
100
30
5
6
5
4
3
2
1
0
0
Figure 8. Gate-To-Source and Drain-To-Source
30
25
20
15
10
70
60
50
40
30
20
10
5
0
0.4
0
25
V
Figure 10. Diode Forward Voltage vs. Current
DS
1
V
Figure 12. Maximum Avalanche Energy vs.
T
Q
GS
J
V
1
= 25°C
SD
0.5
Q
= 0 V
50
G
Voltage vs. Total Charge
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Starting Junction Temperature
, TOTAL GATE CHARGE (nC)
T
2
J
, JUNCTION TEMPERATURE (°C)
0.6
75
3
Q
T
0.7
100
4
Q
2
0.8
5
125
0.9
I
T
D
J
= 30 A
= 25°C
6
V
I
D
150
GS
1.0
= 11 A
7
16
14
12
10
8
6
4
2
0
175
1.1