ntd4815n ON Semiconductor, ntd4815n Datasheet - Page 3
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ntd4815n
Manufacturer Part Number
ntd4815n
Description
Power Mosfet 30 V, 35 A, Single N-channel, Dpak/ipak
Manufacturer
ON Semiconductor
Datasheet
1.NTD4815N.pdf
(8 pages)
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ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 4)
DRAIN-SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Source Inductance
Drain Inductance, DPAK
Drain Inductance, IPAK
Gate Inductance
Gate Resistance
Parameter
(T
J
= 25°C unless otherwise specified)
Symbol
t
t
d(OFF)
d(ON)
V
Q
t
R
L
L
L
L
RR
t
t
t
t
SD
a
b
RR
G
r
f
S
D
D
G
http://onsemi.com
NTD4815N
V
GS
V
V
I
3
GS
S
GS
I
D
= 0 V, dIS/dt = 100 A/ms,
= 30 A
= 11.5 V, V
= 15 A, R
= 0 V,
Test Condition
T
I
S
A
= 30 A
= 25°C
G
DS
= 3.0 W
= 15 V,
T
T
J
J
= 125°C
= 25°C
Min
0.0164
17.6
18.4
0.92
15.3
2.49
1.88
3.46
Typ
6.3
2.3
1.0
8.7
6.6
2.6
5.5
Max
1.2
Unit
nH
ns
ns
nC
W
V