ntd4856n ON Semiconductor, ntd4856n Datasheet - Page 4

• Manufacturer Part Number: ntd4856n
• Description: Power Mosfet 25 V, 89 A, Single N-channel, Dpak/ipak
• Manufacturer: ON Semiconductor

100
0.04
0.03
0.02
0.01
90
80
70
60
50
40
30
20
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
0
-50
0
2
10 V
I
V
Figure 3. On-Resistance vs. Gate-to-Source
D
GS
V
= 30 A
-25
DS
V
Figure 1. On-Region Characteristics
Figure 5. On-Resistance Variation with
= 10 V
GS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
T
J
4
0
, JUNCTION TEMPERATURE (°C)
3.8 V
4 V
25
4.2 V
2
Temperature
50
Voltage
6
75
3
TYPICAL PERFORMANCE CURVES
100
8
125
T
J
4
I
T
= 25°C
D
J
= 30 A
= 25°C
http://onsemi.com
150
3.6 V
3.4 V
3.2 V
2.8 V
2.6 V
10
NTD4856N
5
175
4
0.0075
0.0065
0.0055
0.0045
0.0035
0.0025
10000
0.008
0.007
0.006
0.005
0.004
0.003
0.002
1000
100
130
120
100
110
90
80
70
60
50
40
30
20
10
0
20
5
0
Figure 4. On-Resistance vs. Drain Current and
T
V
Figure 6. Drain-to-Source Leakage Current
V
J
DS
GS
V
= 25°C
V
30
DS
≥ 10 V
GS
= 0 V
Figure 2. Transfer Characteristics
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
10
I
40
D
T
, DRAIN CURRENT (AMPS)
J
= 25°C
vs. Drain Voltage
T
J
50
Gate Voltage
= 125°C
2
T
T
V
V
J
J
GS
GS
= 125°C
= 150°C
15
60
= 11.5 V
= 4.5 V
T
J
3
70
= -55°C
20
80
4
90
100
25
5