ntd4856n ON Semiconductor, ntd4856n Datasheet

no-image

ntd4856n

Manufacturer Part Number
ntd4856n
Description
Power Mosfet 25 V, 89 A, Single N-channel, Dpak/ipak
Manufacturer
ON Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ntd4856n-1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
ntd4856n-35G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
ntd4856nT4G
Manufacturer:
ON Semiconductor
Quantity:
1 966
Part Number:
ntd4856nT4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
ntd4856nT4G
Manufacturer:
ON
Quantity:
8 000
Part Number:
ntd4856nT4G
Manufacturer:
AP
Quantity:
20 000
NTD4856N
Power MOSFET
25 V, 89 A, Single N-Channel, DPAK/IPAK
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2007
December, 2007 - Rev. 0
MAXIMUM RATINGS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Continuous Drain
Current R
(Note 2)
Power Dissipation
R
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Pulsed Drain
Current
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain-to-Source Avalanche
Energy (T
I
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
L
Trench Technology
Low R
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb-Free Devices
VCORE Applications
DC-DC Converters
Low Side Switching
qJA
qJA
qJC
= 19 A
(Note 1)
(Note 2)
(Note 1)
DS(on)
pk
qJA
qJA
qJC
J
, L = 1.0 mH, R
= 25°C, V
to Minimize Conduction Losses
Parameter
DD
t
Steady
p
State
=10ms
= 50 V, V
(T
G
J
= 25 W)
= 25°C unless otherwise stated)
GS
T
T
T
T
T
T
T
T
T
T
T
A
A
A
A
A
A
C
C
C
A
A
= 10 V,
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
I
Symbol
DmaxPkg
V
T
dV/dt
EAS
V
I
P
P
P
T
STG
T
DSS
ID
DM
I
I
I
GS
D
D
S
J
D
D
D
L
,
-55 to
Value
180.5
+175
16.8
13.0
2.14
13.3
10.3
1.33
±20
179
260
25
89
69
60
45
50
6
1
Unit
V/ns
mJ
°C
°C
W
W
W
V
V
A
A
A
A
A
A
Gate
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
CASE 369AA
1
1 2
(Bent Lead)
V
STYLE 2
Drain
Drain 3
(BR)DSS
25 V
DPAK
4
2
3
Source
ORDERING INFORMATION
G
Y
WW
4856N = Device Code
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
N-CHANNEL MOSFET
http://onsemi.com
Gate
6.8 mW @ 4.5 V
(Straight Lead)
4.7 mW @ 10 V
R
CASE 369AC
1
= Year
= Work Week
= Pb-Free Package
DS(ON)
Drain
Drain
3 IPAK
1
4
D
2
2 3
Publication Order Number:
3
4
MAX
Source
S
Gate
(Straight Lead
CASE 369D
1
1
NTD4856N/D
Drain
DPAK)
Drain
2
I
IPAK
D
4
89 A
3
2
MAX
3
Source
4

Related parts for ntd4856n

ntd4856n Summary of contents

Page 1

... CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK) MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain Gate Drain Source Source Gate Drain Source Y = Year WW = Work Week 4856N = Device Code G = Pb-Free Package ORDERING INFORMATION Publication Order Number: NTD4856N/D ...

Page 2

... Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. NTD4856N (T = 25°C unless otherwise specified) J Symbol Test Condition = 250 ...

Page 3

... Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance, DPAK Drain Inductance, IPAK Gate Inductance Gate Resistance 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. NTD4856N (T = 25°C unless otherwise specified) J Symbol Test Condition ...

Page 4

... GATE-TO-SOURCE VOLTAGE (VOLTS) GS Figure 3. On-Resistance vs. Gate-to-Source Voltage 1 1 1.4 1.2 1.0 0.8 0.6 -50 - JUNCTION TEMPERATURE (°C) J Figure 5. On-Resistance Variation with Temperature NTD4856N 130 ≥ 120 T = 25° 110 3.6 V 100 ...

Page 5

... SINGLE PULSE T = 25° LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area NTD4856N TYPICAL PERFORMANCE CURVES 25° Figure 8. Gate-To-Source and Drain-To-Source ...

Page 6

... ORDERING INFORMATION Device NTD4856NT4G NTD4856N-1G NTD4856N-35G IPAK Trimmed Lead †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTD4856N TYPICAL PERFORMANCE CURVES P (pk DUTY CYCLE 1.0E-03 1.0E-02 t, TIME (ms) Figure 13 ...

Page 7

... 0.13 (0.005) M *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTD4856N PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369AA-01 ISSUE A SEATING -T- PLANE SOLDERING FOOTPRINT* 6 ...

Page 8

... BSC 2.29 BSC G H 0.034 0.040 0.87 1.01 J 0.018 0.023 0.46 0.58 K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 --- 3.93 --- STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD4856N/D ...

Related keywords