sch1305 Sanyo Semiconductor Corporation, sch1305 Datasheet

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sch1305

Manufacturer Part Number
sch1305
Description
P-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Ordering number : ENN7759
SCH1305
Featurest
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : JE
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
• Low ON-resistance.
• High-speed switching.
• 1.8V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Symbol
Symbol
V GSS
V DSS
t d (on)
t d (off)
I GSS
I DSS
Coss
Ciss
Crss
Tstg
I DP
Tch
P D
yfs
I D
t r
t f
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
I D =--1mA, V GS =0
V DS =- -12V, V GS =0
V GS = 8V, V DS =0
V DS =- -6V, I D =--1mA
V DS =- -6V, I D =--0.8A
I D =--0.8A, V GS =- -4.5V
I D =--0.4A, V GS =- -2.5V
I D =--0.1A, V GS =- -1.8V
V DS =- -6V, f=1MHz
V DS =- -6V, f=1MHz
V DS =- -6V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
SCH1305
Conditions
Conditions
2
0.8mm)
min
1.08
--0.3
--12
52804 TS IM TA-100791
Ratings
typ
Ratings
235
335
445
160
1.8
45
35
45
29
30
11
--55 to +150
Continued on next page.
max
--1.5
150
--1.0
--12
0.7
310
470
670
--10
10
--6
10
No.7759-1/4
Unit
Unit
m
m
m
pF
pF
pF
ns
ns
ns
ns
W
V
V
A
A
V
V
S
C
C
A
A

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sch1305 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN SCH1305 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol Conditions ...

Page 2

... IT07142 Ratings min typ max 2.6 0.25 0.65 --0. -- --0. =7 OUT PW= SCH1305 P --0.5 --1.0 --1.5 --2.0 Gate-to-Source Voltage (on --40 -- 100 Ambient Temperature Unit --1 --6V --2 ...

Page 3

... Drain Current --4 --1.5 A --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0 0.5 1.0 1.5 2.0 Total Gate Charge 0.8 0.7 0.6 0.4 0 100 Ambient Temperature SCH1305 -- --1 --0.1 7 --1 --0.4 IT04357 100 IT04359 -- --1 --0 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2004. Specifications and information herein are subject to change without notice. SCH1305 PS No.7759-4/4 ...

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