sch2819 Sanyo Semiconductor Corporation, sch2819 Datasheet - Page 4

• Manufacturer Part Number: sch2819
• Description: Mosfet N-channel Silicon Mosfet Sbd Schottky Barrier Diode
• Manufacturer: Sanyo Semiconductor Corporation

1000
100
1.0
1.0
0.1
0.8
0.6
0.4
0.2
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
0
0.01
0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
0
V DS =10V
I D =1.5A
2
2
20
3
3
0.5
Ambient Temperature, Ta -- C
5 7
40
Total Gate Charge, Qg -- nC
5
Drain Current, I D -- A
Drain Current, I D -- A
7
0.1
SW Time -- I D
t d (on)
0.1
60
V GS -- Qg
t f
1.0
P D -- Ta
y
2
fs -- I D
2
80
3
3
5 7
1.5
100
5
1.0
7
1.0
120
2
2.0
V DD =15V
V GS =4V
[MOSFET]
V DS =10V
[MOSFET]
[MOSFET]
[MOSFET]
3
2
140
IT06106
5 7 10
IT06108
IT06110
IT09564
3
160
2.5
SCH2819
5
1000
0.01
0.01
100
1.0
0.1
1.0
0.1
10
10
10
0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0.2
0
Ta=25 C
Single pulse
Mounted on a ceramic board (900mm
2 3
0.3
Ciss, Coss, Crss -- V DS
Operation in this
area is limited by R DS (on).
5
0.4
5 7
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
Diode Forward Voltage, V SD -- V
0.1
0.5
10
2 3
I S -- V SD
0.6
A S O
5 7
Ciss
0.7
15
1.0
0.8
2 3
2
20
0.9
0.8mm) 1unit
5 7 10
1.0
[MOSFET]
[MOSFET]
[MOSFET]
25
V GS =0V
No.8291-4/6
f=1MHz
1.1
<10 s
2 3
IT06107
IT06109
IT09563
1.2
30
5