sch2809 Sanyo Semiconductor Corporation, sch2809 Datasheet - Page 2

• Manufacturer Part Number: sch2809
• Description: Mosfet P-channel Silicon Mosfet Sbd Schottky Barrier Diode
• Manufacturer: Sanyo Semiconductor Corporation

Electrical Characteristics at Ta=25 C
Package Dimensions
unit : mm
7028-003
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
1
6
Parameter
1.6
5
2
0.5
4
3
0.2
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
6 : Drain
SANYO : SCH6
0.2
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
Symbol
t d (on)
t d (off)
I DSS
I GSS
Coss
Ciss
Crss
V SD
Qgs
Qgd
yfs
Qg
V R
V F
I R
t rr
C
t r
t f
I D =--1mA, V GS =0V
V DS =--12V, V GS =0V
V GS = 8V, V DS =0V
V DS =--6V, I D =--1mA
V DS =--6V, I D =--0.8A
I D =--0.6A, V GS =- -4.5V
I D =--0.3A, V GS =- -2.5V
I D =--0.1A, V GS =- -1.8V
V DS =--6V, f=1MHz
V DS =--6V, f=1MHz
V DS =--6V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =--6V, V GS =--4.5V, I D =- -1.2A
V DS =--6V, V GS =--4.5V, I D =- -1.2A
V DS =--6V, V GS =--4.5V, I D =- -1.2A
I S =--1.2A, V GS =0V
I R =0.5mA
I F =0.5A
V R =6V
V R =10V, f=1MHz
I F =I R =100mA, See specified Test Circuit.
SCH2809
Conditions
Electrical Connection
1
6
5
2
min
1.08
--0.3
--12
15
3
4
Ratings
typ
--0.92
0.25
0.65
235
335
445
160
1.8
2.6
0.4
45
35
45
29
30
13
11
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
6 : Drain
Top view
max
0.46
--1.0
--1.5
310
470
670
--10
10
No. A0446-2/6
10
90
Unit
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
pF
ns
V
V
S
V
V
V
A
A
A