ph4830l NXP Semiconductors, ph4830l Datasheet - Page 6

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ph4830l

Manufacturer Part Number
ph4830l
Description
Ph4830l N-channel Trenchmos Logic Level Fet
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
PH4830L_1
Product data sheet
Fig 5. Output characteristics: drain current as a
Fig 7. Transfer characteristics: drain current as a
(A)
(A)
I
I
D
D
100
80
60
40
20
80
60
40
20
0
0
T
function of drain-source voltage; typical values
T
function of gate-source voltage; typical values
j
0
j
0
= 25 C
= 25 C and 150 C; V
0.2
1
V
GS
(V) = 10
0.4
T
j
= 150 C
2
DS
5
> I
0.6
D
25 C
R
4.5
3
DSon
0.8
V
003aab716
003aab714
V
GS
DS
(V)
(V)
Rev. 01 — 6 September 2007
3.8
3.4
3.2
3
4
1
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R
(m )
DSon
a
1.6
1.2
0.8
0.4
20
15
10
5
0
2
0
T
of drain current; typical values
factor as a function of junction temperature
a
0
j
60
= 25 C
=
V
GS
----------------------------- -
R
DSon 25 C
(V) = 2.8
R
N-channel TrenchMOS logic level FET
DSon
25
0
3
50
60
3.2
120
75
PH4830L
3.4
© NXP B.V. 2007. All rights reserved.
003aab715
003aab467
T
I
D
j
( C)
(A)
3.8
4.5
10
100
180
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