ssrf30n20-400 SeCoS Halbleitertechnologie GmbH, ssrf30n20-400 Datasheet - Page 2

• Manufacturer Part Number: ssrf30n20-400
• Description: 23a, 200v, Rds On 400m? N-ch Enhancement Mode Power Mosfet
• Manufacturer: SeCoS Halbleitertechnologie GmbH

http://www.SeCoSGmbH.com/
01-Dec-2010 Rev.A
ELECTRICAL CHARACTERISTICS
Notes
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
1
2
Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％.
Guaranteed by design, not subject to production testing.
Elektronische Bauelemente
PARAMETER
1
1
1
SYMBO MIN. TYP. MAX. UNIT
R
(T
V
T
T
I
I
I
DS(ON)
V
Q
D(on)
Q
GS(th)
Q
GSS
DSS
g
d(on)
d(off)
A
T
T
SD
fs
gs
gd
g
r
f
= 25°C unless otherwise specified)
Dynamic
120
Static
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.1
8.5
3.3
4.0
30
18
59
37
9
-
-
-
-
-
-
-
2
N-Ch Enhancement Mode Power MOSFET
±100
400
450
25
1
-
-
-
-
-
-
-
-
-
-
-
23A, 200V, R
SSRF30N20-400
mΩ
nC
nA
μA
nS
V
A
S
V
Any changes of specification will not be informed individually.
V
V
V
V
V
V
V
V
I
V
V
I
V
I
V
R
S
D
D
DS
DS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GEN
= 34 A, V
= 34 A
L
TEST CONDITIONS
= 90 A
= 25 
DS(ON)
= V
= 160V, V
= 160V,V
= 15V, I
= 10V, I
= 4.5V, I
= 25 V
= 0V, V
= 5V, V
= 15 V
= 4.5 V
= 10 V
GS,
400mΩ
I
D
GS
D
D
GS
GS
D
= 250 μA
= 30 A
= 30 A
GS
= 20 A
= 0 V
GS
= 20V
= 10V
= 0V,T
= 0V
Page 2 of 2
J
=55°C