ssrf30n20-400 SeCoS Halbleitertechnologie GmbH, ssrf30n20-400 Datasheet
ssrf30n20-400
Manufacturer Part Number
ssrf30n20-400
Description
23a, 200v, Rds On 400m? N-ch Enhancement Mode Power Mosfet
Manufacturer
SeCoS Halbleitertechnologie GmbH
Datasheet
1.SSRF30N20-400.pdf
(2 pages)
http://www.SeCoSGmbH.com/
01-Dec-2010 Rev.A
DESCRIPTION
FEATURES
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
These miniature surface mount MOSFETs utilize a high cell density trench
process to provide Low R
dissipation. Typical applications are DC-DC converters and power management
in portable and battery-powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Total Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Thermal Resistance Junction-Ambient
Maximum Thermal Resistance Junction-Case
1
2
Notes：
V
Low R
Low thermal impedance copper leadframe ITO-220 saves board
space.
Fast switching speed.
High performance trench technology.
DS
200
Package Limited.
Pulse width limited by maximum junction temperature.
(V)
DS(on)
Elektronische Bauelemente
provides higher efficiency and extends battery life.
450@V
400@V
SSRF30N20-400
R
PARAMETER
DS
(on) (m
2
GS
GS
1
= 4.5V
DS(on)
= 10V
1
and to ensure minimal power loss and heat
THERMAL RESISTANCE RATINGS
(T
A suffix of “-C” specifies halogen free
I
23
D
A
(A)
= 25°C unless otherwise specified)
1
RoHS Compliant Product
1
1
P
I
D
SYMBOL
D
@T
@T
T
J
R
R
V
V
, T
I
DM
I
C
θJC
θJA
GS
DS
S
C
=25℃
=25℃
STG
N-Ch Enhancement Mode Power MOSFET
23A, 200V, R
SSRF30N20-400
RATINGS
-55 ~ 175
62.5
200
±20
240
300
0.5
23
90
Any changes of specification will not be informed individually.
H
L
REF.
C
D
G
A
B
E
F
DS(ON)
Gate
15.00
B
Min.
9.50
4.30
2.50
2.40
0.30
Dimensions in millimeters
Millimeter
13.00 Min
400mΩ
ITO-220
15.60
10.50
M
K
Max.
L
4.70
3.10
2.80
0.70
J
°C / W
°C / W
Source
UNIT
Drain
N
C
°C
A
W
REF.
V
V
A
A
A
Page 1 of 2
M
H
K
L
N
J
3.1
Min.
3.00
0.90
0.50
2.34
2.50
Millimeter
D
G
E
F
Max.
3.4
3.80
1.50
0.90
2.74
2.90
Related parts for ssrf30n20-400
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Manufacturer:
SeCoS Halbleitertechnologie GmbH
Datasheet:
Part Number:
Description:
Manufacturer:
SeCoS Halbleitertechnologie GmbH
Datasheet:
Part Number:
Description:
Manufacturer:
SeCoS Halbleitertechnologie GmbH
Datasheet:
Part Number:
Description:
Manufacturer:
SeCoS Halbleitertechnologie GmbH
Datasheet:
Part Number:
Description:
Manufacturer:
SeCoS Halbleitertechnologie GmbH
Datasheet:
Part Number:
Description:
Manufacturer:
SeCoS Halbleitertechnologie GmbH
Datasheet:
Part Number:
Description:
Manufacturer:
SeCoS Halbleitertechnologie GmbH
Datasheet:
Part Number:
Description:
Digital Transistors NPN
Manufacturer:
SeCoS Halbleitertechnologie GmbH
Datasheet:
Part Number:
Description:
Pnp Silicon General Purpose Transistor
Manufacturer:
SeCoS Halbleitertechnologie GmbH
Datasheet:
Part Number:
Description:
Npn Silicon General Purpose Transistor
Manufacturer:
SeCoS Halbleitertechnologie GmbH
Datasheet:
Part Number:
Description:
1.0 A Schottky Barrier Rectifiers
Manufacturer:
SeCoS Halbleitertechnologie GmbH
Datasheet:
ssrf30n20-400 Summary of contents
Page 1
... SYMBOL =25℃ =25℃ STG THERMAL RESISTANCE RATINGS 1 R θJA R θJC SSRF30N20-400 23A, 200V, R 400mΩ DS(ON) ITO-220 Dimensions in millimeters Millimeter REF. REF. Min. Max. A 15.00 15. 9.50 10. 13.00 Min ...
Page 2
... Dynamic d(on d(off SSRF30N20-400 23A, 200V, R 400mΩ DS(ON) TEST CONDITIONS - 250 μA DS GS, D ±100 0V 20V 160V μ 160V 10V DS ...