MX29LV004CB Macronix, MX29LV004CB Datasheet - Page 50

• Manufacturer Part Number: MX29LV004CB
• Description: 4M-Bit CMOS Single Voltage 3V Only Flash Memory
• Manufacturer: Macronix

Table 15. ERASE AND PROGRAMMING PERFORMANCE(1)
Note:
Table 17. DATA RETENTION
P/N:PM1148
Table 16. LATCH-UP CHARACTERISTICS
PARAMETER
Sector Erase Time
Chip Erase Time
Byte Programming Time
Chip Programming Time
Erase/Program Cycles
Input Voltage with respect to GND on all pins except I/O pins
Input Voltage with respect to GND on all I/O pins
Current
Includes all pins except Vcc. Test conditions: Vcc = 3.0V, one pin at a time.
Parameter Description
Data Retention Time
1.Not 100% Tested, Excludes external system level over head.
2.Typical values measured at 25 C, 3V.
3.Maximum values measured at 25 C, 2.7V.
100,000
50
MIN.
MX29LV004C T/B
Test Conditions
150 C
125 C
TYP.(2)
LIMITS
0.7
4.5
4
9
MAX.(3)
-100mA
13.5
300
15
32
-1.0V
-1.0V
MIN.
Min
10
20
REV. 1.1, AUG. 30, 2005
Cycles
Vcc + 1.0V
UNIT
sec
sec
sec
+100mA
us
12.5V
Years
Years
MAX.
Unit