MX29F200CT Macronix International, MX29F200CT Datasheet - Page 38

• Manufacturer Part Number: MX29F200CT
• Description: 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
• Manufacturer: Macronix International

ERASE AND PROGRAMMING PERFORMANCE(1)
Note:
P/N:PM1250
LATCH-UP CHARACTERISTICS
DATA RETENTION
PARAMETER
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
Erase/Program Cycles
Input Voltage with respect to GND on all pins except I/O pins
Input Voltage with respect to GND on all I/O pins
Current
Includes all pins except Vcc. Test conditions: Vcc = 5.0V, one pin at a time.
PARAMETER
Data Retention Time
1. Not 100% Tested, Excludes external system level over head.
2. Typical values measured at 25 C,5V.
3. Maximum values measured at worst condition: 90 C, 4.5V, 100K cycles.
Byte Mode
Word Mode
100,000
38
MIN.
MX29F200C T/B
LIMITS
TYP.(2)
0.7
2.3
1.5
11
4
9
MAX.(3)
-100mA
300
360
6.8
4.5
-1.0V
-1.0V
15
32
MIN.
MIN.
20
www.DataSheet4U.com
REV. 1.0 , DEC. 14, 2005
Cycles
VCC + 1.0V
UNITS
sec
sec
sec
+100mA
sec
us
us
13.5V
Years
MAX.
UNIT