TIM4450-16UL Toshiba Semiconductor, TIM4450-16UL Datasheet
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TIM4450-16UL
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TIM4450-16UL Summary of contents
Page 1
... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM4450-16UL n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE SYMBOL ...
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... Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc Channel Temperature Storage PACKAGE OUTLINE (2-16G1B) 4 – C1.0 (2) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. TIM4450-16UL SYMBOL ...
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... V = 10V 4. TIM4450-16UL Output Power vs. Frequency Frequency (GHz) Output Power vs. Input Power ( ...
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... TIM4450-16UL Power Dissipation vs. Case Temperature (℃ IM3 vs. Output Power Characteristics - 10V 4.7GHz f= 5MHz - Po(dBm), Single Carrier Level ...