TIM4450-45SL Toshiba, TIM4450-45SL Datasheet
![no-image](/images/manufacturer_photos/0/6/668/toshiba_sml.jpg)
TIM4450-45SL
Specifications of TIM4450-45SL
Available stocks
Related parts for TIM4450-45SL
TIM4450-45SL Summary of contents
Page 1
... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM4450-45SL HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz BROAD BAND INTERNALLY MATCHED FET ...
Page 2
... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-16G1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM4450-45SL SYMBOL ...
Page 3
... RF PERFORMANCE Output Power (Pout) vs. Frequency V =10V DS ≅9. Pin=37.0dBm 4.4 Output Power(Pout) vs. Input Power(Pin) 49 freq.=5.0GHz 48 V =10V DS ≅9. TIM4450-45SL 4.5 4.6 4.7 4.8 Frequency (GHz) Pout ηadd 35 37 Pin(dBm) 3 4.9 5 ...
Page 4
... Power Dissipation(PT) vs. Case Temperature(Tc) 130 110 IM3 vs. Output Power Characteristics -10 V =10V DS ≅9. freq.=5.0GHz -20 Δf=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM4450-45SL 80 120 Tc( ° 200 160 38 40 ...