TIM1011-8L Toshiba Semiconductor, TIM1011-8L Datasheet
TIM1011-8L
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TIM1011-8L Summary of contents
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... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM1011-8L HIGH GAIN G1dB=6 10.7 GHz to 11.7 GHz BROAD BAND INTERNALLY MATCHED FET ...
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... Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-11C1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM1011-8L SYMBOL UNIT ...
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... RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=9V IDS≅3.4A 41 Pin=33.5 dBm Output Power(Pout) vs. Input Power(Pin) 42 freq.=11.7GHz 41 VDS=9V IDS≅3. TIM1011-8L 10.7 11.2 Frequency(GHz) Pout ηadd 31 33 Pin(dBm ...
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... Power Dissipation(PT) vs. Case Temperature(Tc IM3 vs. Output Power Characteristics -10 VDS=9V freq.=11.7GHz -20 Δf=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM1011-8L 80 120 Tc( ° 160 200 31 33 ...