TIM1011-5L Toshiba, TIM1011-5L Datasheet
TIM1011-5L
Manufacturer Part Number
TIM1011-5L
Description
Manufacturer
Toshiba
Datasheet
1.TIM1011-5L.pdf
(4 pages)
Specifications of TIM1011-5L
Configuration
Single
Gate-source Voltage (max)
5V
Drain-source Volt (max)
15V
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TIM1011-5L
Manufacturer:
TOSHIBA
Quantity:
101
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3
Distortion
Drain Current
Channel Temperature Rise
Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.)
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
FEATURES
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
HIGH POWER
HIGH GAIN
rd
P1dB=37.5dBm at 10.7GHz to 11.7GHz
G1dB=7.0dB at 10.7GHz to 11.7GHz
CHARACTERISTICS
CHARACTERISTICS
Order Intermodulation
SYMBOL
SYMBOL
R
V
V
G
P
ΔTch
IDS2
I
I
η
th(c-c)
IM3
GSoff
DS1
DSS
ΔG
gm
GSO
1dB
1dB
add
(VDS X IDS + Pin – P1dB)
(Single Carrier Level)
V
I
V
I
V
V
I
Channel to Case
DS
DS
GS
f= 9.5 to 10.5GHz
DS
DS
DS
GS
Two-tone Test
CONDITIONS
CONDITIONS
Po=30.0 dBm
= 2.4A
= 72mA
= -72μA
= 3V
=
=
= 0V
VDS= 9V
X Rth(c-c)
3V
3V
BROAD BAND INTERNALLY MATCHED
HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM1011-5L
UNIT
UNIT
° C/W
dBm
dBc
mS
dB
dB
° C
%
A
A
V
A
V
MIN.
37.0
MIN.
-1.5
-42
6.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-5
Rev. Sep. 2006
TYP. MAX.
37.5
TYP. MAX.
1500
-45
7.0
2.0
4.5
-3.0
25
5.0
3.0
⎯
⎯
⎯
±0.8
2.5
5.5
80
-4.5
⎯
⎯
⎯
⎯
3.7
⎯
⎯
⎯
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TIM1011-5L Summary of contents
Page 1
... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM1011-5L BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE SYMBOL ...
Page 2
... CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-9D1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM1011-5L SYMBOL UNIT ...
Page 3
... RF PERFORMANCES Output Power (Pout) vs. Frequency VDS=9V IDS≅2.0A Pin=30.5dBm Output Power(Pout) vs. Input Power(Pin) 41 freq.=11.2GHz 40 VDS=9V IDS≅2. TIM1011-5L 10.7 11.2 Frequency(GHz) Pout ηadd 28 30 Pin(dBm ...
Page 4
... Power Dissipation(PT) vs. Case Temperature(Tc TIM1011-5L 80 120 Tc( ° 200 160 ...