MBM29PL12LM Fujitsu Media Devices, MBM29PL12LM Datasheet - Page 41

• Manufacturer Part Number: MBM29PL12LM
• Description: FLASH MEMORY 128 M (16M x 8/8M x 16) BIT
• Manufacturer: Fujitsu Media Devices

■ ELECTRICAL CHARACTERISTICS
1. DC Characteristics
Input Leakage Current
Output Leakage Current
A
Current
V
V
V
V
V
V
V
ACC Accelerated Program
Current
Input Low Level
Input High Level
Voltage for WP/ACC Sector
Protection/Unprotection and
Program Acceleration
Voltage for Autoselect, and
Temporary Sector Unprotected
Output Low Voltage Level
Output High Voltage Level
Low V
(Read ) *
(Intra-Page Read ) *
(Program / Erase) *
(Erase-Suspend-Program) *
9
CC
CC
CC
CC
CC
CC
CC
, OE, RESET Inputs Leakage
Standby Current *
Reset Current *
Active Current
Automatic Sleep Current *
Active Current
Active Current
Active Current
CC
Lock-Out Voltage
Parameter
1,
*
2
2
2,
2
2
*
3
2
4
Symbol
V
V
I
I
I
I
I
I
I
I
V
V
V
V
I
I
V
ACC
CC1
CC2
CC3
CC4
CC5
CC6
CC7
I
LIT
ACC
LO
LKO
LI
OH
OL
IL
IH
ID
V
V
V
V
A
CE = V
f = 5 MHz
CE = V
f = 10 MHz
CE = V
4-Word
CE = V
CE = V
RESET = V
OE = V
RESET = V
WP/ACC = V
CE = V
RESET = V
V
WP/ACC = V
CE = V
CE = V
Vcc = Vcc Max,
WP/ACC =V
V
V
I
I
OL
OH
IN
CC
OUT
CC
9
IN
CC
CC
, OE, RESET = 12.5 V
= 4.0 mA, V
= –2.0 mA, V
= V
= V
= V
= V
= 3.0 V to 3.6 V
= 3.0 V to 3.6 V
= V
SS
CC
IL
IL
IL
IL
CC
IH
SS
IL
IL
CC
CC
, OE = V
, OE = V
, OE = V
, OE = V
, OE = V
, OE = V
SS
, WP/ACC = V
±0.3V or V
to V
±0.3 V,
±0.3 V,
Max
Max,
to V
Conditions
CC
CC
CC
ACC
CC
CC
CC
±0.3 V,
±0.3 V,
±0.3 V,
CC
CC
,
±0.3 V
±0.3 V
Max
—
—
—
CC
, V
IH
IH
IH
IH
IH
IH
= V
,
,
, t
,
= V
CC
ss
PRC
CC
WP/ACC pin
Others
Word
Byte
Word
Byte
±0.3V,
WP/ACC pin
Vcc Pin
= V
CC
Min
CC
= 25ns,
Min
CC
±0.3 V
Max
MBM29PL12LM
0.85×V
0.7×V
–2.0
–1.0
–1.0
–0.5
11.5
11.5
Min
2.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
CCQ
CC
Value
12.0
12.0
Typ
15
15
35
35
10
50
50
—
—
—
—
—
—
—
—
—
—
—
1
1
1
V
CC
+2.0
+1.0
+1.0
12.5
12.5
Max
0.45
0.6
2.5
35
25
25
50
50
20
60
60
45
60
—
5
5
5
+ 0.3
Unit
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
10
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