MBM29LV160T Fujitsu Media Devices, MBM29LV160T Datasheet
MBM29LV160T
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MBM29LV160T Summary of contents
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... FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M MBM29LV160T FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP (I) (Package suffix: PFTN-Normal Bend Type, PFTR-Reversed Bend Type) ...
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... MBM29LV160T -80/-90/-12 (Continued) • Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same device • Sector protection Hardware method disables any combination of sectors from program or erase operations • Sector Protection set function by Extended sector Protect command • ...
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... MBM29LV160T GENERAL DESCRIPTION The MBM29LV160T 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160T/B is offered in a 48-pin TSOP (I), 46-pin SON, 48-pin CSOP and 48-ball FBGA packages. The device is designed to be programmed in-system with the standard system 3 ...
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... Kbytes or 32 Kwords SA30 64 Kbytes or 32 Kwords SA31 32 Kbytes or 16 Kwords SA32 8 Kbytes or 4 Kwords SA33 8 Kbytes or 4 Kwords SA34 16 Kbytes or 8 Kwords MBM29LV160T Top Boot Sector Architecture 4 /MBM29LV160B -80/-90/- Address Range ( 16) Address Range 00000H to 0FFFFH 10000H to 1FFFFH 20000H to 2FFFFH 30000H to 3FFFFH 40000H to 4FFFFH ...
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... MBM29LV160T Sector Sector Size SA0 16 Kbytes or 8 Kwords SA1 8 Kbytes or 4 Kwords SA2 8 Kbytes or 4 Kwords SA3 32 Kbytes or 16 Kwords SA4 64 Kbytes or 32 Kwords SA5 64 Kbytes or 32 Kwords SA6 64 Kbytes or 32 Kwords SA7 64 Kbytes or 32 Kwords SA8 64 Kbytes or 32 Kwords SA9 ...
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... State Control BYTE RESET Command Register CE OE Low V Detector /MBM29LV160B MBM29LV160T/160B +0.3 V -80 –0.3 V +0.6 V — –0 RY/BY Erase Voltage Generator Program Voltage Generator Chip Enable Output Enable STB Timer for Address Program/Erase Latch -80/-90/-12 — ...
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... MBM29LV160T CONNECTION DIAGRAMS N. RESET 12 N.C. 13 N.C. 14 RY/ ...
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... MBM29LV160T -80/-90/-12 (Continued N.C. N.C. RESET WE N. /MBM29LV160B (TOP VIEW ...
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... MBM29LV160T LOGIC SYMBOL RY/BY RESET BYTE /MBM29LV160B -80/-90/-12 Table 1 MBM29LV160T/B Pin Configuration Pin Address Inputs Data Inputs/Outputs Chip Enable Output Enable OE Write Enable WE Ready/Busy Output RY/BY Hardware Reset Pin/ ...
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... MBM29LV160T/B User Bus Operation (BYTE = ...
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... MBM29LV160T ORDERING INFORMATION Standard Products Fujitsu standard products are available in several packages. The order number is formed by a combination of: MBM29LV160 T -80 DEVICE NUMBER/DESCRIPTION MBM29LV160 16 Mega-bit (2M 3.0 V-only Read, Write, and Erase /MBM29LV160B -80/-90/-12 PFTN PACKAGE TYPE PFTN = 48-Pin Thin Small Outline Package (TSOP) Standard Pinout ...
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... Standby Mode There are two ways to implement the standby mode on the MBM29LV160T/B devices. One is by using both the CE and RESET pins; the other via the RESET pin only. When using both pins, a CMOS standby mode is achieved with CE and RESET inputs both held at V Under this condition the current consumed is less than 5 A max ...
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... IL For the MBM29LV160T/B these two bytes are given in the Table 4.2. All identifiers for manufactures and device will exhibit odd parity with DQ defined as the parity bit. In order to read the proper device codes when executing ...
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... SA28 SA29 SA30 SA31 SA32 SA33 SA34 /MBM29LV160B Sector Address Tables (MBM29LV160T Address Range 00000H to 0FFFFH 10000H to 1FFFFH 20000H to 2FFFFH ...
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... MBM29LV160T Table 6 Sector Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 ...
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... Tables 4.1 and 4.2 for Autoselect codes. Temporary Sector Unprotection This feature allows temporary unprotection of previously protected sectors of the MBM29LV160T/B devices in order to change data. The Sector Unprotection mode is activated by setting the RESET pin to high voltage (12 V). During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. ...
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... MBM29LV160T Table 7 MBM29LV160T/B Standard Command Definitions Command First Bus Bus Sequence Write Cycle Write Cycles Req'd (Notes Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data Word Read/Reset 1 XXXH F0H /Byte (Note 6) Word 555H Read/Reset 3 (Note 6) ...
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... PROM programmers typically access the signature codes by raising A voltage onto the address lines is not generally desired system design practice. 18 /MBM29LV160B MBM29LV160T/B Extended Command Definitions First Bus Second Bus Write Cycle Write Cycle ...
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... Following the last command write, a read cycle from address XX00H retrieves the manufacture code of 04H. A read cycle from address XX01H for 16 (XX02H for 8) retrieves the device code (MBM29LV160T = C4H and MBM29LV160B = 49H for 8 mode; MBM29LV160T = 22C4H and MBM29LV160B = 2249H for 16 mode). (See Tables 4 ...
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... MBM29LV160T -80/-90/-12 Sector erase is a six-bus cycle operation. There are two “unlock” write cycles, followed by writing the “set-up” command. Two more “unlock” write cycles are then followed by the Sector Erase command. The sector address (any address location within the desired sector) is latched on the falling edge of WE, while the command (Data = 30H) is latched on the rising edge of WE ...
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... Extended Command (1) Fast Mode MBM29LV160T/B has Fast Mode function. This mode dispenses with the initial two unlock cycles required in the standard program command sequence writing Fast Mode command into the command register. In this mode, the required bus cycle for programming is two cycles instead of four bus cycles in standard program command ...
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... DQ 7 Data Polling The MBM29LV160T/B device features Data Polling as a method to indicate to the host that the Embedded Algorithms are in progress or completed. During the Embedded Program Algorithm, an attempt to read the devices will produce the complement of the data last written to DQ Algorithm, an attempt to read the device will produce the true data last written to DQ Erase Algorithm, an attempt to read the device will produce a “ ...
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... DQ 6 Toggle Bit I The MBM29LV160T/B also feature the “Toggle Bit I” method to indicate to the host system that the Embedded Algorithms are in progress or completed. During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the device will result in DQ toggling between one and zero ...
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... RY/BY Ready/Busy Pin The MBM29LV160T/B provides a RY/BY open-drain output pin as a way to indicate to the host system that the Embedded Algorithms are either in progress or has been completed. If the output is low, the device is busy with either a program or erase operation. If the output is high, the device is ready to accept any read/write or erase operation ...
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... Word/Byte Configuration The BYTE pin selects the byte (8-bit) mode or word (16-bit) mode for the MBM29LV160T/B device. When this pin is driven high, the device operates in the word (16-bit) mode. The data is read and programmed ...
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... MBM29LV160T -80/-90/-12 Table 11 Common Flash Memory Interface Code Description A Query-unique ASCII string “QRY” Primary OEM Command Set 2h: AMD/FJ standard type Address for Primary Extended Table Alternate OEM Command Set (00h = not applicable) Address for Alternate OEM Extended Table V Min. (write/erase) CC D7-4: volt, D3-0: 100 mvolt V Max ...
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... MBM29LV160T/B-90/-12...........................................................................–40°C to +85°C V Supply Voltages CC MBM29LV160T/B-80 .................................................................................+3 +3.6 V MBM29LV160T/B-90/-12...........................................................................+2 +3.6 V Operating ranges define those limits between which the functionality of the device is quaranteed. WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All the device’s electrical characteristics are warranted when the device is operated within these ranges ...
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... MBM29LV160T -80/-90/-12 MAXIMUM OVERSHOOT +0.6 V –0.5 V –2.0 V Figure +2.0 V Figure 2 +14.0 V +13 +0 Note : This waveform is applied for A Figure 3 28 /MBM29LV160B Maximum Negative Overshoot Waveform Maximum Positive Overshoot Waveform OE, and RESET. ...
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... MBM29LV160T DC CHARACTERISTICS Parameter Parameter Description Symbol I Input Leakage Current LI I Output Leakage Current OE, RESET Inputs Leakage 9 I LIT Current I V Active Current (Note 1) CC1 Active Current (Note 2) CC2 Current (Standby) CC3 Current (Standby, RESET) CC4 CC V Current ...
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... READY t ELFL — BYTE Switching Low or High t ELFH Note: Test Conditions: Output Load: 1 TTL gate and 30 pF (MBM29LV160T/B-80/-90) Input rise and fall times Input pulse levels: 0 3.0 V Timing measurement reference level Input: 1.5 V Output: 1.5 V Notes including jig capacitance (MBM29LV160T/B-80/-90) ...
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... Read Min. Toggle and Data Polling Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Byte Typ. Word Typ. Max. Min. Min. Min. Min. Min. Min. -80/-90/-12 MBM29LV160T/B Unit -80 -90 - 120 ...
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... Rise Time to V VIDR — t RESET Pulse Width RP Notes: 1. This does not include the preprogramming time. 2. This timing is for Sector Protection operation. 32 /MBM29LV160B Description Min. Max. Max. Min. (Note 2) Min. ID Min. -80/-90/-12 MBM29LV160T/B Unit -80 -90 -12 200 200 200 ...
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... MBM29LV160T SWITCHING WAVEFORMS • Key to Switching Waveforms WAVEFORM Addresses OEH WE HIGH-Z Outputs Figure 5.1 /MBM29LV160B -80/-90/-12 INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Change from from May Will Be Change Change from from “H” or “L”: ...
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... MBM29LV160T -80/-90/-12 Addresses RESET Outputs Figure 5.2 34 /MBM29LV160B t RC Addresses Stable t ACC t RH HIGH-Z AC Waveforms for Hardware Reset/Read Operations -80/-90/- Output Valid ...
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... MBM29LV160T -80/-90/-12 3rd Bus Cycle 555H PA Addresses WPH t GHWL A0H Data Notes address of the memory location to be programmed data to be programmed at word address the output of the complement of the data written to the device. ...
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... MBM29LV160T -80/-90/-12 Addresses Data Notes address of the memory location to be programmed data to be programmed at word address the output of the complement of the data written to the device the output of the data written to the device. OUT 5. Figure indicates last two bus cycles out of four bus cycle sequence. ...
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... MBM29LV160T Addresses 555H GHWL AAH Data t VCS the sector address for Sector Erase. Addresses = 555H (Word), AAAAH (Byte) for Chip Erase. 2. These waveforms are for the 16 mode. (The addresses differ from 8 mode.) Figure 8 AC Waveforms for Chip/Sector Erase Operations ...
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... MBM29LV160T -80/-90/- Data Data Valid Data (The device has completed the Embedded operation.) 7 Figure 9 AC Waveforms for Data Polling during Embedded Algorithm Operations OES OE DQ Data Stops toggling. (The device has completed the Embedded operation.) ...
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... MBM29LV160T -80/-90/- RY/BY Figure 11 RY/BY Timing Diagram during Program/Erase Operations WE RESET RY/BY Figure 12 RESET, RY/BY Timing Diagram /MBM29LV160B The rising edge of the last WE signal Entire programming or erase operations t BUSY READY -80/-90/-12 39 ...
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... MBM29LV160T -80/-90/- BYTE ELFH Figure BYTE t ELFL A-1 Figure 14 40 /MBM29LV160B FHQV Timing Diagram for Word Mode Configuration FLQZ ...
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... MBM29LV160T -80/-90/- BYTE Figure 15 BYTE Timing Diagram for Write Operations /MBM29LV160B The falling edge of the last WE signal Input Valid t SET HOLD -80/-90/-12 41 ...
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... MBM29LV160T -80/-90/- SAX VLHT VLHT WE CE Data t VCS V CC SAX = Sector Address for initial sector SAY = Sector Address for next sector Note byte mode. ...
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... MBM29LV160T VCS t VLHT RESET t VIDR Add 60H Data SPAX : Sector Address to be protected SPAY : Next Sector Address to be protected TIME-OUT : Time-out Window = 150 s (min) Figure 17 Extended Sector Protection Timing Diagram /MBM29LV160B -80/-90/-12 SPAX SPAX TIME-OUT 60H 40H ...
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... MBM29LV160T -80/-90/- VIDR t VCS RESET CE WE RY/BY Figure 18 Enter Erase Embedded Suspend Erasing WE Erase Erase Suspend Toggle DQ and with OE Note read from the erase-suspended sector /MBM29LV160B t Program or Erase Command Sequence VLHT Unprotection period Temporary Sector Unprotection Timing Diagram ...
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... MBM29LV160T EMBEDDED PROGRAM TM ALGORITHM Increment Address * : The sequence is applied for 16 mode. The addresses differ from 8 mode. Figure 20 /MBM29LV160B -80/-90/-12 Start Write Program Command Sequence (See Below) Data Polling Device No Verify Byte ? Yes No Last Address ? Yes Programming Completed Program Command Sequence* (Address/Command): 555H/AAH ...
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... MBM29LV160T -80/-90/-12 EMBEDDED PROGRAM TM ALGORITHM Chip Erase Command Sequence* (Address/Command): 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H 555H/10H * : The sequence is applied for 16 mode. The addresses differ from 8 mode. 46 /MBM29LV160B Start Write Erase Command Sequece (See Below) Data Polling or Toggle Bit from Device No Data = FFH ...
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... MBM29LV160T -80/-90/- rechecked even “1” because Figure 22 /MBM29LV160B VA =Address for programming =Any of the sector addresses Start within the sector being erased during sector erase or multiple erases operation. Read Byte =Any of the sector addresses ( within the sector not being Addr ...
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... MBM29LV160T -80/-90/- rechecked even changing to “1” /MBM29LV160B Start Read ( Addr. = “H” or “L” Toggle 6 ? Yes Yes Read Byte ( Addr. = “H” or “L” Toggle Yes Fail Pass = “1” because DQ ...
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... MBM29LV160T -80/-90/-12 Increment PLSCNT No PLSCNT = 25? Yes Remove V from A ID Write Reset Command Device Failed * : byte mode Figure 24 /MBM29LV160B Start Setup Sector Addr 19 16 PLSCNT = RESET = ...
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... MBM29LV160T -80/-90/-12 Notes: 1. All protected sectors are unprotected. 2. All previously protected sectors are protected once again. Figure 25 50 /MBM29LV160B Start RESET = V ID (Note 1) Perform Erase or Program Operations RESET = V IH Temporary Sector Unprotection Completed (Note 2) Temporary Sector Unprotection Algorithm -80/-90/-12 ...
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... MBM29LV160T FAST MODE ALGORITHM Increment Address * : The sequence is applied for 16 mode The addresses differ from 8 mode. Figure 26 Embedded Programming Algorithm for Fast Mode /MBM29LV160B -80/-90/-12 Start 555H/AAH 2AAH/55H 555H/20H XXXXH/A0H Program Address/Program Data Data Polling Device No Verify Byte? Yes No Last Address ? Yes ...
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... MBM29LV160T -80/-90/-12 FAST MODE ALGORITHM Device is Operating in Temporary Sector Unprotect Mode Increment PLSCNT No PLSCNT = 25? Yes Remove V from RESET ID Write Reset Command Device Failed Figure 27 52 /MBM29LV160B Start RESET = V ID Wait Extended Sector Protect Entry? Yes To Setup Sector Protect Write XXXH/60H ...
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... MBM29LV160T ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Byte Programming Time Word Programming Time Chip Programming Time Erase/Program Cycle TSOP (I) PIN CAPACITANCE Parameter Parameter Description Symbol C Input Capacitance IN C Output Capacitance OUT C Control Pin Capacitance IN2 Note: Test conditions T = 25° 1.0 MHz ...
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... MBM29LV160T -80/-90/-12 PACKAGE DIMENSIONS 48-pin plastic TSOP (I) (FPT-48P-M19) LEAD No. 1 INDEX 24 20.00±0.20 (.787±.008) 18.40±0.20 * (.724±.008) 0.10(.004) 19.00±0.20 (.748±.008) 1996 FUJITSU LIMITED F48029S-2C /MBM29LV160B -80/-90/-12 *: Resin protruction. (Each side: 0.15(.006) Max) 48 Details of "A" part "A" ...
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... MBM29LV160T 48-pin plastic TSOP (I) (FPT-48P-M20) LEAD No. 1 INDEX 24 19.00±0.20 (.748±.008) 0.10(.004) 18.40±0.20 * (.724±.008) 20.00±0.20 (.787±.008) 1996 FUJITSU LIMITED F48030S-2C-2 C /MBM29LV160B -80/-90/-12 *: Resin protrusion. (Each side: 0.15(.006) Max) 48 Details of "A" part "A" 0.15(.006) 25 0.50±0.10 (.020±.004) 0.15± ...
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... MBM29LV160T -80/-90/-12 46-pin plastic SON (LCC-46P-M02) * 12.00±0.10(.472±.004) 46 10.10±0.20 (.398±.008) 10.00±0.10 (.394±.004) 1 INDEX 1997 FUJITSU LIMITED C46002S-4C /MBM29LV160B Note 1) Resin residue for * marked dimensions is 0.15 max on a single side. Note 2) Die pad geometry may change with the models. ...
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... MBM29LV160T (Continued) 48-pin plastic CSOP (LCC-48P-M03) 48 INDEX LEAD No. 1 10.00±0.10(.394±.004) 0.40(.016) 0.08(.003) TYP 9.20(.362)REF 1998 FUJITSU LIMITED C48056S-1C-1 C /MBM29LV160B -80/-90/-12 "A" 25 10.00±0.20 (.394±.008) 9.50±0.10 (.374±.004) +0.05 0.05 –0 +.002 .002 –.0 (Stand off) 24 0.95±0.05(.037±.002) (Mounting height) Details of " ...
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... MBM29LV160T -80/-90/-12 (Continued) 48-pin plastic FBGA (BGA-48P-M03) 9.00±0.20(.354±.008) INDEX 0.10(.004) 1997 FUJITSU LIMITED B48003S-1C /MBM29LV160B Note: The actual shape of corners may differ from the dimension. 1.20(.047)MAX (Mounting height) 0.35±0.10(.014±.004) (Stand off) 0.80(.031) NOM 8.00±0.20 4.00(.157) (.315± ...
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... MBM29LV160T (Continued) 48-pin plastic FBGA (BGA-48P-M13) 9.00±0.20(.354±.008) INDEX C0.25(.010) 0.10(.004) 1998 FUJITSU LIMITED B480013S-1C-1 C /MBM29LV160B -80/-90/-12 Note: The actual shape of corners may differ from the dimension. +0.15 +.006 1.05 .041 –0.10 –.004 (Mounting height) 0.38±0.10(.015±.004) (Stand off) 8.00± ...
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... MBM29LV160T -80/-90/-12 FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices KAWASAKI PLANT, 4-1-1, Kamikodanaka Nakahara-ku, Kawasaki-shi Kanagawa 211-8588, Japan Tel: 81(44) 754-3763 Fax: 81(44) 754-3329 http://www.fujitsu.co.jp/ North and South America FUJITSU MICROELECTRONICS, INC. Semiconductor Division ...