MBM29DL32TF Fujitsu, MBM29DL32TF Datasheet - Page 36

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MBM29DL32TF

Manufacturer Part Number
MBM29DL32TF
Description
32M-Bit Dual Operation Flash Memory
Manufacturer
Fujitsu
Datasheet

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13. Write Operation Status
In Progress
Exceeded
Time Limits
mode and does not apply high voltage to the RESET pin. Please refer to “7. Extended Command (3) Extended
Sector Group Protection” for details of extension sector group protect setting.
The other method is to apply high voltage (V
and (A
protect circuit, apply high voltage (V
in the HiddenROM area, and read. When “1” appears on DQ
on DQ
method because other than the HiddenROM mode, it is the same as the sector group protect previously men-
tioned. Refer to “8. Secor Group Protection” in
protect setting.
Take note that other sector groups will be affected if an address other than those for the HiddenROM area is
selected for the sector group address, so please be careful. Pay close attention that once it is protected, protection
CANNOT BE CANCELLED.
Detailed in “Hardware Sequence Flags Table” are all the status flags that can determine the status of the bank
for the current mode operation. The read operation from the bank that does not operate Embedded Algorithm
returns a data of memory cell. These bits offer a method for determining whether a Embedded Algorithm is
completed properly. The information on DQ
sector is consecutively read, then the DQ
erasing sector is consecutively read. This allows the user to determine which sectors are erasing and which are
not.
The status flag is not output from bank (non-busy bank) not executing Embedded Algorithm. For example, there
is bank (busy bank) which is now executing Embedded Algorithm. When the read sequence is [1] <busy bank>,
[2] <non-busy bank>, [3] <busy bank>, the DQ
memory cell is outputted. In the erase-suspend read mode with the same read sequence, DQ
in the [1] and [3].
In the erase suspend read mode, DQ
outputted.
0
6
, A
if it is not protected. Apply write pulse again. The same command sequence could be used for the above
3
, A
Embedded Program Algorithm
Embedded Erase Algorithm
Erase
Suspended
Mode
Program
Suspended
Mode
Embedded Program Algorithm
Embedded Erase Algorithm
Erase
Suspended
Mode
2
, A
1
, A
0
)
Erase Suspend Read
Erase Suspend Read
Erase Suspend Program
Program Suspend Read
Program Suspend Read
Erase Suspend Program
Status
(Non-Program Suspended Sector)
(Erase Suspended Sector)
(Non-Erase Suspended Sector)
(Non-Erase Suspended Sector)
(Program Suspended Sector)
(Non-Erase Suspended Sector)
(0, 0, 0, 1, 0) , and apply the write pulse during the HiddenROM mode. To verify the
ID
Hardware Sequence Flags Table
) to A
2
is toggled in the [1] and [3]. In case of [2], the data of memory cell is
2
bit will toggle. However, DQ
9
2
, specify (A
is address sensitive. This means that if an address from an erasing
ID
) to A
6
is toggling in the case of [1] and [3]. In case of [2], the data of
FUNCTIONAL DESCRIPTION for details of the sector group
9
and OE, set the sector address in the HiddenROM area
6
, A
3
, A
0
2
, the protect setting is completed. “0” will appear
Data
Data
Data
, A
DQ
DQ
DQ
DQ
DQ
0
1
0
MBM29DL32TF/BF
1
, A
7
7
7
7
7
0
)
2
will not toggle if an address from a non-
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Data
Data
Data
DQ
(0, 0, 0, 1, 0) and the sector address
1
6
Data
Data
Data
DQ
0
0
0
0
1
1
1
5
6
Data
Data
Data
will not be toggled
DQ
0
1
0
0
0
1
0
3
Toggle *
Toggle
Data
Data
Data
DQ
N/A
N/A
1 *
1
1
2
2
-70
1
35

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