MBM29DL32TF Fujitsu, MBM29DL32TF Datasheet - Page 28

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MBM29DL32TF

Manufacturer Part Number
MBM29DL32TF
Description
32M-Bit Dual Operation Flash Memory
Manufacturer
Fujitsu
Datasheet

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5. Read Mode
6. Output Disable
7. Write
8. Sector Group Protection
command sequence is illustrated in “MBM29DL32TF/BF Command Definitions Table” ( DEVICE BUS OPER-
ATION). (Refer to “2. Autoselect Command” in COMMAND DIFINITIONS.)
In WORD mode, a read cycle from address 00h returns the manufacturer’s code (Fujitsu
at address 01h outputs device code. When 227Eh is output, it indicates that two additional codes, called Extended
Device Codes will be required. Therefore the system may continue reading out these Extended Device Codes
at addresses of 0Eh and 0Fh. Notice that the above applies to WORD mode; the addresses and codes differ
from those of BYTE mode. (Refer to “MBM29DL32TF/BF Sector Group Protection Verify Autoselect Codes
Tables” and “MBM29DL32TF/BF Extended Autoselect Code Tables” in DEVICE BUS OPERATION.)
In the case of applying V
cannot be executed.
The MBM29DL32TF/BF have two control functions required to obtain data at the outputs. CE is the power control
and used for a device selection. OE is the output control and used to gate data to the output pins if a device is
selected.
Address access time (t
access time (t
enable access time (t
addresses have been stable for at least t
power-up, input hardware reset or to change CE pin from “H” to “L”
With the OE input at a logic high level (V
pins to be in a high impedance state.
Device erasure and programming are accomplished via the command register. The contents of the register serve
as inputs to the internal state machine. The state machine outputs dictate the function of the device.
The command register itself does not occupy any addressable memory location. The register is a latch used to
store the commands, along with the address and data information needed to execute the command. The com-
mand register is written by bringing WE to V
falling edge of WE or CE, whichever happens later; while data is latched on the rising edge of WE or CE,
whichever happens first. Standard microprocessor write timings are used.
Refer to “ AC WRITE CHARACTERISTICS” and Erase/Programming Waveforms for specific timing parameters.
The MBM29DL32TF/BF feature hardware sector group protection. This feature will disable both program and
erase operations in any combination of twenty five sector groups of memory. (See “Sector Group Addresses
Tables (MBM29DL32TF/BF)” in FLEXIBLE SECTOR-ERASE ARCHITECTURE) . The sector group protection
feature is enabled using programming equipment at the user’s site. The device is shipped with all sector groups
unprotected.
To activate this mode, the programming equipment must force V
V
A
in FLEXIBLE SECTOR-ERASE ARCHITECTURE define the sector address for each of the seventy one (71)
individual sectors, and “Sector Group Addresses Tables (MBM29DL32TF/BF)” in FLEXIBLE SECTOR-ERASE
ARCHITECTURE define the sector group address for each of the twenty five (25) individual group sectors.
Programming of the protection circuitry begins on the falling edge of the WE pulse and is terminated with the
rising edge of the same. Sector group addresses must be held constant during the WE pulse. See “15. Sector
Group Protection Timing Diagram” in TIMING DIAGRAM and “5. Sector Group Protection Algorithm” in FLOW
ID
15
, A
11.5 V) , CE
14
, A
13
, and A
CE
) is the delay from stable addresses and stable CE to valid data at the output pins. The output
12
V
) should be set to the sector to be protected. “Sector Address Tables (MBM29DL32TF/BF)”
OE
IL
) is the delay from the falling edge of OE to valid data at the output pins. (Assuming the
ACC
and A
ID
) is equal to the delay from stable addresses to valid output data. The chip enable
on A
6
9
, since both Bank 1 and Bank 2 enter Autoselect mode, simultanous operation
A
3
A
2
ACC
IH
A
-t
) , output from the devices are disabled. This will cause the output
0
OE
IL
, while CE is at V
time.) When reading out a data without changing addresses after
V
IL
, A
1
V
IH
. The sector group addresses (A
IL
ID
and OE is at V
on address pin A
MBM29DL32TF/BF
IH
. Addresses are latched on the
9
and control pin OE, (suggest
20
04h) . A read cycle
, A
19
, A
18
, A
17
, A
-70
16
,
27

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