MBM200GS6AW Hitachi, MBM200GS6AW Datasheet - Page 3

• Manufacturer Part Number: MBM200GS6AW
• Description: IGBT POWER MODULE
• Manufacturer: Hitachi

1000
100
1.5
1.0
0.5
20
15
10
0.1
10
5
0
0
1
0
0
0
Vcc=300V
V
R
T
Resistive Load
Vcc=300V
V
R
T
Inductive Load
GE
C
G
V
R
T
C
GE
G
=25°C
=12W
C
=125°C
GE
G
=±15V
=12W
£125°C
=±15V
=12W
100
Switching time vs. Collector current
=±15V
Switching loss vs. Collector current
Reverse biased safe operating area
Collector to Emitter Voltage, V
50
50
Collector Current, I
200
Collector Current, I
100
100
300
400
150
150
C
C
(A)
500
(A)
200
200
CE
TYPICAL
TYPICAL
Etoff
Eton
Err
ton
tf
tr
toff
(V)
600
250
250
700
0.001
0.1
0.01
10
100
0.1
10
1
1
0.001
1
1
1
V
V
IC=200A
T
Resistive Load
C
CC
GE
V
V
IC =200A
T
Inductive Load
=25°C
CC
GE
C
=300V
=±15V
=125°C
=300V
=±15V
Switching loss vs. Gate resistance
Switching time vs. Gate resistance
Transient thermal impedance
0.01
Gate Resistance, R
Gate Resistance, R
Time, t (s)
10
0.1
10
toff
tr
ton
G
G
Err
tf
Etoff
(W)
(W)
Eton
1
PDE-M200GS6AW-0
TYPICAL
TYPICAL
Diode
IGBT
100
100
10