IP4283CZ10 NXP Semiconductors, IP4283CZ10 Datasheet - Page 3

• Manufacturer Part Number: IP4283CZ10
• Description: ESD protection
• Manufacturer: NXP Semiconductors

w w w . D a t a S h e e t 4 U . c o m
NXP Semiconductors
5. Characteristics
Table 4.
T
[1]
[2]
[3]
IP4283CZ10_1
Product data sheet
Symbol
V
I
V
C
C
R
V
LRzd
amb
BRzd
F
C
CL(ch)trt(pos)
ch(TMDS)
ch(mutual)
dyn
ch(TMDS)
This parameter is guaranteed by design.
Human Body Model according to JESD22-A-J114D.
According to
= 25 C unless otherwise specified.
Characteristics
Parameter
Zener diode breakdown voltage
Zener diode reverse leakage current
forward voltage
TMDS channel capacitance
TMDS channel capacitance difference f = 1 MHz; V
mutual channel capacitance
dynamic resistance
positive transient channel clamping
voltage
IEC 61000-4-5/9.
Rev. 01 — 7 May 2009
Conditions
I = 1 mA
per TMDS channel; V = 3.0 V
f = 1 MHz; V
between signal pin and pin n.c.;
f = 1 MHz; V
I = 1 A; T
V
esd
positive transient
negative transient
= 8 kV HBM; T
amb
bias
bias
bias
= 25 C
ESD protection for ultra high-speed interfaces
= 2.5 V
= 2.5 V
= 2.5 V
amb
= 25 C
IP4283CZ10
[1]
[1]
[1]
[3]
[2]
Min
6
-
-
-
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Typ
-
-
0.7
0.6
0.05 -
0.07 -
2.4
1.3
8
Max Unit
9
1
-
-
-
-
-
3 of 10
V
V
pF
pF
pF
V
A