DCR1375SBA Dynex Semiconductor, DCR1375SBA Datasheet - Page 6

• Manufacturer Part Number: DCR1375SBA
• Description: Phase Control Thyristor
• Manufacturer: Dynex Semiconductor

DCR1375SBA
6/8
0.0001
10000
0.001
1000
Fig.6 Transient thermal impedance - junction to case
0.01
100
0.1
0.001
0.1
Conditions:
T
V
t
p
j
R
= 3ms - Trapezoidal
= 125˚C
= 100V
Rate of decay of on-state current dI/dt - (A/µs)
0.01
Fig.4 Stored charge
1.0
0.1
3 phase 120˚
6 phase 60˚
Conduction
Time - (s)
Halfwave
d.c.
1
Effective thermal resistance
Double side
0.0130
0.0141
0.0170
0.0200
10
Junction to case ˚C/W
dI/dt
Double side cooled
Anode side cooled
I
I
T
T
= 800A
10
Anode side
I
0.0210
0.0221
0.0250
0.0280
RR
Q
S
100
100
Fig.7 Surge (non-repetitive) on-state current vs time (with
V
100
0.1
GD
0.001
10
100
1
75
50
25
0
1
Table gives pulse power P
Pulse width
10ms
1ms
100
200
500
µs
ms
Pulse frequency Hz
150
150
150
150
50
20
I
0.01
2
Fig.5 Gate characteristics
50% V
t
Gate trigger current, I
100
150
150
150
100
-
10
RSM
400
150
125
100
25
-
1
Duration
at T
GM
0.1
case
in Watts
2 3 45
Cycles at 50Hz
www.dynexsemi.com
= 125˚C)
GT
- (A)
Region of certain
10
1
triggering
I
2
t = Î
20 30
2
2
x t
50
4.0
3.5
3.0
2.5
2.0
I
FGM
10