DCR1375SBA Dynex Semiconductor, DCR1375SBA Datasheet - Page 4

• Manufacturer Part Number: DCR1375SBA
• Description: Phase Control Thyristor
• Manufacturer: Dynex Semiconductor

DCR1375SBA
DYNAMIC CHARACTERISTICS
GATE TRIGGER CHARACTERISTICS AND RATINGS
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Symbol
Symbol
I
RRM
dV/dt
V
P
dI/dt
V
V
V
I
P
V
V
I
FGM
T(TO)
t
G(AV)
RGM
r
t
I
I
FGM
GT
FGN
gd
/I
GM
T
q
L
H
GT
GD
DRM
Peak reverse and off-state current
Maximum linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
Delay time
Turn-off time
Latching current
Holding current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Parameter
Parameter
At V
To 67% V
From 80% V
Gate source 20V, 20
t
At T
At T
V
Rise time 0.5 s, T
I
V
V
T
T
V
V
At V
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
See table, gate characteristics curve
r
T
D
R
DR
j
j
DRM
DRM
= 800A, t
= 25
= 25
1.0 s. T
= 67% V
= 50V, dI
vj
vj
= 67% V
RRM
DRM
= 5V, T
= 5V, T
= 125
= 125
o
o
/V
C, V
C, V
T
DRM
case
DRM
j
= 125
p
o
o
DRM
D
G-K
C
C
, T
RR
DRM
case
= 125
T
= 1ms, T
DRM
case
= 5V
j
/dt = 20A/ s,
= 125
, Gate source 30V, 15
=
case
, dV
= 25
= 25
Conditions
o
C.
o
j
= 125
C
= 25
o
DR
o
C.
o
Conditions
C
j
C
/dt = 20V/ s linear
= 125˚C,
o
o
C
C
Repetitive 50Hz
Non-repetitive
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Typ.
400
-
-
-
-
-
-
-
-
-
0.259
Max.
1000
Max.
1.02
0.25
0.25
250
500
500
260
150
350
150
3.0
30
10
10
2
5
-
Units
Units
V/ s
A/ s
A/ s
mA
m
mA
mA
mA
W
W
V
V
V
V
A
V
V
s
s