LTC4413-2 Linear Technology, LTC4413-2 Datasheet - Page 3

• Manufacturer Part Number: LTC4413-2
• Description: Fast Ideal Diodes
• Manufacturer: Linear Technology

ELECTRICAL CHARACTERISTICS
SYMBOL
I
I
V
V
R
R
t
t
Short-Circuit Response
I
I
STAT Output
I
I
t
t
ENB Inputs
V
V
V
I
OVI Input (LTC4413-2 Only)
V
V
V
I
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC4413-1/LTC4413-2 are guaranteed to meet performance
specifi cations from 0°C to 85°C. Specifi cations over the –40°C to
85°C ambient operating temperature range are assured by design,
characterization and correlation with statistical process controls.
Note 3: Quiescent current increases with diode current: refer to plot of
I
temperature range, otherwise specifi cations are at T
QROUTB
QOFF
ON
OFF
OC
QOC
SOFF
SON
S(ON)
S(OFF)
ENB
OVI
QF
RTO
FWD
ENBIH
ENBIL
ENBHYST
OVIH
OVIL
OVID
FWD
ON
vs I
OUT
.
PARAMETER
Quiescent Current While in Reverse
Turn-Off. Current Drawn from V
OUTB Supplies Chip Power
Quiescent Current with Both ENBA and
ENBB High
Reverse Turn-Off Voltage (V
Forward Voltage Drop (V
at I
On-Resistance, R
(Measured as ΔV/ΔI)
On-Resistance, R
(Measured as V/I at I
PowerPath Turn-On Time
PowerPath Turn-Off Time
Current Limit
Quiescent Current While in Overcurrent
Operation
STAT Off Current
STAT Sink Current
STAT Pin Current Turn-On Time
STAT Pin Current Turn-Off Time
ENB Inputs Rising Threshold Voltage
ENB Inputs Falling Threshold Voltage
ENB Input Hysteresis
ENB Inputs Pull-Down Current
OVI Input Rising Threshold Voltage
OVI Input Falling Threshold Voltage
OVI-OVP Voltage Drop
OVI Bias Current
OUT
= –1mA
FWD
ON
Regulation
IN
Regulation
= 1A)
IN
– V
OUT
OUT
OUTA
– V
)
IN
when
)
CONDITIONS
V
V
V
V
V
V
V
Starting
V
Falling to 0mA
V
V
Shut Down
V
V
V
V
V
V
V
V
V
V
V
INA
INA
IN
IN
IN
IN
IN
IN
INA OR B
INA OR B
IN
IN
IN
ENB
ENB
ENBHYST
OUT
OVI
OVI
OVI
OVI
A
= 25°C. (Notes 2, 6)
= 3.6V
= 3.6V
= 3.6V, I
= 3.6V, I
= 3.6V, from ENB Falling to I
= 3.6V, from ENB Rising with I
> V
= 3.6V, from ENB Falling
= 3.6V, from ENB Rising
= V
= V
Rising
Falling
= 8V, No Load at OVP
= 8V
Rising
Falling
< V
OUT
INB
INB
IN
The
= 3.6V (Note 5)
= 3.6V, I
= (V
, V
= 3.6V, V
= 0V, V
= 3.6V, V
OUT
IN
CTL
●
ENBIH
= 1A (Note 5)
= –100mA to –500mA (Note 5)
denotes the specifi cations which apply over the full operating
< V
OUT
OUTA
– V
IL
ENB
ENBA
Note 4: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions.
Overtemperature protection will become active at a junction temperature
greater than the maximum operating temperature. Continuous operation
above the specifi ed maximum operating junction temperature may impair
device reliability.
Note 5: Specifi cation is guaranteed by correlation to wafer-level
measurements.
Note 6: Unless otherwise specifi ed, current into a pin is positive and
current out of a pin is negative. All voltages referenced to GND.
= 1.8A (Note 5)
, T
ENBIL
= 3.6V, V
< V
J
= V
< 135°C, I
IL
)
ENBB
OUT
OUTB
IN
= 1V
OUT
Ramp
= 100mA
LTC4413-1/LTC4413-2
= 5.5V
< I
MAX
●
●
●
●
●
●
●
●
●
MIN
400
1.8
5.4
–5
–1
7
2
www.DataSheet4U.com
TYP
100
140
100
540
460
100
3.5
1.8
0.8
5.9
5.6
28
18
11
11
90
80
2
0
3
MAX
140
200
130
600
6.5
6.2
38
10
24
13
1
4
441312fb
UNITS
3
mΩ
mΩ
mV
mV
mV
mV
mV
mV
μA
μA
μA
μA
μA
μA
μA
μs
μs
μs
μs
A
V
V