6MBI75UB-120 Fuji Electric, 6MBI75UB-120 Datasheet - Page 9

• Manufacturer Part Number: 6MBI75UB-120
• Description: IGBT Module
• Manufacturer: Fuji Electric

200
150
100
200
150
100
100.0
50
50
10.0
0
0
1.0
0.1
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
0
Capacitance vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
1
1
Collector-Emitter voltage : VCE [V]
VGE=0V, f= 1MHz, Tj= 25℃
VGE=20V
10
VGE=15V / chip
Tj=25℃
Tj= 25℃ / chip
2
2
15V
Tj=125℃
3
3
12V
20
Cies
Cres
Coes
4
4
10V
8V
30
5
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
0
200
150
100
10
50
8
6
4
2
0
0
0
5
Collector current vs. Collector-Emitter voltage (typ.)
0
MS5F 5497
Vcc=600V， Ic=75A，Tj= 25℃
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
1
Collector-Emitter voltage : VCE [V]
100
10
Gate charge : Qg [ nC ]
VGE=20V
Tj= 125℃ / chip
Tj=25ﾟC / chip
2
200
15
VGE
15V
VCE
3
300
20
H04-004-03
9
Ic=150A
Ic=75A
Ic= 37.5A
4
12V
10V
8V
13
400
25
5