6MBI75UB-120 Fuji Electric, 6MBI75UB-120 Datasheet
6MBI75UB-120
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6MBI75UB-120 Summary of contents
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... Jun. 18 ’03 Y.Kobayashi Jun. 18 ’03 SPECIFICATION IGBT Module Device Name : 6MBI75UB-120 Type Name : MS5F 5497 Spec. No. : T.Fujihira T.Miyasaka K.Yamada Fuji Electric Co.,Ltd. Matsumoto Factory 1 MS5F 5497 13 H04-004-07 ...
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Classi- Date fication Ind. enactment Jun.- 18 -’03 Applied Content date Drawn Issued date MS5F 5497 Checked Approved T.Miyasaka T.Fujihira K.Yamada 2 13 H04-004-06 ...
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... Outline Drawing ( Unit : Equivalent circuit 30,31, 33,34,35 6MBI75UB-120 ( ) shows reference dimension 27,28,29 24,25, MS5F 5497 16,17, 21,22,23 13,14, H04-004-03 ...
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Maximum Ratings ( at Tc= 25℃ unless otherwise specified ） Items Collector-Emitter voltage Gate-Emitter voltage Collector current Collector Power Dissipation Junction temperature Storage temperature between terminal and copper base *1 Isolation voltage between thermistor and others *2 Screw Mounting ...
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... Lot.No. 7.Applicable category This specification is applied to IGBT Module named 6MBI75UB-120 . 8.Storage and transportation notes ・ The module should be stored at a standard temperature 35℃ and humidity 75% . ・ Store modules in a place with few temperature changes in order to avoid condensation on the module surface. ...
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Reliability test results Test cate- Test items gories 1 Terminal Strength Pull force (Pull test) Test time 2 Mounting Strength Screw torque Test time 3 Vibration Range of frequency : 10 ~ 500Hz Sweeping time Acceleration Sweeping direction : ...
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Test cate- Test items gories 1 High temperature Reverse Bias Test temp. Bias Voltage Bias Method Test duration 2 High temperature Bias (for gate) Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity ...
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Reliability Test Results Test cate- Test items gorie s 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 5 Solderabitlity 6 Resistance to Soldering Heat 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage ...
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Collector current vs. Collector-Emitter voltage (typ.) Tj= 25℃ / chip 200 15V VGE=20V 12V 150 100 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 200 Tj=25℃ Tj=125℃ 150 ...
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Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=9.1Ω, Tj= 25℃ 10000 1000 100 100 Collector current : Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=75A, VGE=±15V, Tj= 25℃ 10000 ton toff 1000 ...
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Forward current vs. Forward on voltage (typ.) chip 200 Tj=25℃ 150 Tj=125℃ 100 Forward on voltage : Transient thermal resistance (max.) 1.00 0.10 0.01 0.001 0.010 0.100 Pulse width : Pw ...
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This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. 製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。 絶対最大定格を超えて使用すると、素子が破壊する場合があります。 - Connect adequate fuse or protector of circuit between three-phase line ...
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... The application examples described in this specification only explain typical ones that used the Fuji Electric products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. 本 ...