2MBI300UE-120 FE, 2MBI300UE-120 Datasheet - Page 3
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2MBI300UE-120
Manufacturer Part Number
2MBI300UE-120
Description
IGBT Module U-Series
Manufacturer
FE
Datasheet
1.2MBI300UE-120.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2MBI300UE-120
Manufacturer:
FUJI
Quantity:
1 000
Part Number:
2MBI300UE-120
Quantity:
50
2MBI300UE-120
10000
10000
1000
1000
250.0
200.0
150.0
100.0
100
100
50.0
10
10
0.0
0.1
0
0.1
Vcc=600V, Ic=300A, VGE=±15V, Tj= 125°C
Vcc=600V, Ic=300A, VGE=±15V, Tj= 25°C
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=2Ω, Tj= 25°C
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
100
Collector current : Ic [ A ]
Gate resistance : Rg [ Ω ]
Gate resistance : Rg [ Ω ]
200
1.0
1.0
300
tr
10.0
10.0
400
500
ton
toff
tr
tf
Eon
Eoff
Err
ton
toff
tf
100.0
100.0
600
10000
800
600
400
200
1000
100
0
60.0
50.0
40.0
30.0
20.0
10.0
10
0.0
0
0
+VGE=15V,-VGE <= 15V, RG >= 2 Ω ,Tj <= 125°C
0
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=2Ω, Tj=125°C
Switching loss vs. Collector current (typ.)
200
Collector - Emitter voltage : VCE [ V ]
100
Reverse bias safe operating area (max.)
100
Collector current : Ic [ A ]
Vcc=600V, VGE=±15V, Rg=2Ω
Collector current : Ic [ A ]
400
200
200
600
300
300
800
400
400
IGBT Module
1000
Eoff(125°C)
Eon(125°C)
Eoff(25°C)
Eon(25°C)
500
Err(125°C)
Err(25°C)
500
toff
ton
tr
tf
1200
600
600