2MBI300UE-120 FE, 2MBI300UE-120 Datasheet

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2MBI300UE-120

Manufacturer Part Number
2MBI300UE-120
Description
IGBT Module U-Series
Manufacturer
FE
Datasheet
1.2MBI300UE-120.pdf (4 pages)

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Part Number:
2MBI300UE-120
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www.DataSheet4U.com
2MBI300UE-120
IGBT Module U-Series
· High speed switching
· Voltage drive
· Low inductance module structure
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector current
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
Screw Torque
*
*
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*3
*3:Biggest internal terminal resistance among arm.
*
Thermal resistance
Contact Thermal resistance
Items
1 :
2 :
4
Thermal resistance characteristics
: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Electrical characteristics (at Tj=25°C unless otherwise specified)
Recommendable value : Mounting 2.5 to 3.5 N·m(M5 or M6), Terminals 3.5 to 4.5N·m(M6)
All terminals should be connected together when isolation test will be done.
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Features
Maximum ratings and characteristics
Symbols
Symbols
I
I
V
V
(terminal)
V
(chip)
C
t
t
t
t
t
V
(terminal)
V
(chip)
t
R lead
Rth(j-c)
Rth(j-c)
Rth(c-f)*
CES
GES
on
r(j)
off
f
r
rr
GE(th)
CE(sat)
CE(sat)
ies
F
F
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Mounting *
Terminals *
Applications
4
Conditions
V
V
V
V
V
V
I
V
R
V
IGBT
FWD
With thermal compound
C
I
I
F
F
GE
CE
CE
GE
CE
CC
GE
GE
G
=300A
=300A
=300A
Conditions
=2.0
=0V, V
=20V, I
=15V, I
=10V, V
2
=0V, V
=600V
=±15V
=0V
2
Symbol
V
V
I
I
-I
-I
P
T
T
V
C
C
stg
C
C
C
j
CES
GES
iso
p
CE
GE
C
C
GE
pulse
=300mA
=300A
=1200V
=±20V
=0V, f=1MHz
1200V / 300A 2 in one-package
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Conditions
Continuous
AC:1min.
1 device
1ms
Characteristics
Characteristics
Min.
Min.
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
–
–
4.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ.
Typ.
Equivalent Circuit Schematic
–
–
0.0167
34
C1
–
–
6.5
1.95
2.20
1.75
2.00
0.36
0.21
0.03
0.37
0.07
1.75
1.85
1.60
1.70
–
0.45
Rating
-40 to +125
1200
1660
+150
2500
±20
450
300
900
600
300
600
3.5
4.5
G1 E1
Max.
Max.
600
0.075
0.12
–
3.0
8.5
2.30
–
2.10
–
–
1.20
0.60
–
1.00
0.30
2.05
–
1.90
–
0.35
–
C2E1
Unit
Unit
Unit
V
V
A
W
°C
VAC
N·m
mA
nA
V
V
nF
µs
V
µs
m
°C/W
°C/W
°C/W
G2 E2
E2

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2MBI300UE-120 Summary of contents

Page 1

... IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Collector Power Dissipation Junction temperature ...

Page 2

... Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 800 VGE=20V 600 400 200 0 0.0 1.0 2.0 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 800 600 T j=25°C 400 200 0 0.0 1.0 Collector-Emitter voltage : VCE [V] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V Hz, Tj= 25°C 100 ...

Page 3

... Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=2Ω, Tj= 25°C 10000 1000 100 10 0 100 200 Collector current : Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=300A, VGE=±15V, Tj= 25°C 10000 1000 100 10 0.1 1.0 Gate resistance : Rg [ Ω ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=300A, VGE=± ...

Page 4

... Forward current vs. Forward on voltage (typ.) 800 700 T j=25°C 600 500 400 300 200 100 0 0.00 1.00 Forward on voltage : Transient thermal resistance (max.) 1.000 0.100 0.010 0.001 0.001 0.010 Pulse width : Pw [ sec ] Outline Drawings, mm chip 1000 T j=125°C 2.00 3.00 4.00 FWD IGBT 0.100 1.000 IGBT Module Reverse recovery characteristics (typ ...

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