2MBI100NE-120 Fuji, 2MBI100NE-120 Datasheet - Page 3

• Manufacturer Part Number: 2MBI100NE-120
• Description: IGBT MODULE ( N series )
• Manufacturer: Fuji

0,001
1000
0,01
250
200
150
100
100
0,1
50
0,001
1
0
0
V
CC
Forward Current vs. Forward Voltage
1
=600V, I
Transient Thermal Resistance
Gate Resistance : R
Forward Voltage : V
0,01
Pulse Width : PW [s]
Switching Time vs. R
T
j
10
=125°C
C
=100A, V
2
V
GE
=0V
25°C
GE
=±15V, T
3
0,1
G
F
[V]
[ ]
G
j
=25°C
4
Diode
IGBT
t
t
t
t
OFF
ON
r
f
1
5
1000
800
600
400
200
1000
100
800
600
400
200
10
0
0
0
0
0
+V
200
Reversed Biased Safe Operating Area
GE
S C S O A
(non-repetitive pulse)
RBSOA (Repetitive pulse)
Reverse Recovery Characteristics
Collector-Emitter Voltage : V
Dynamic Input Characteristics
=15V, -V
50
Gate Charge : Q
400
400
Forward Current : I
GE
t
T
rr
<15V, T
j
, I
600
=25°C
100
rr
vs. I
j
800
<125°C, R
F
G
800
[nC]
F
[A]
150
CE
1000
V
G
[V]
CC
>9.1
=400V
t
25°C
t
125°C
I
125°C
rr
I
25°C
rr
600V
rr
rr
800V
1200
1200
200
20
15
10
5
0
25