2MBI100NE-120 Fuji, 2MBI100NE-120 Datasheet
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2MBI100NE-120
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2MBI100NE-120 Summary of contents
Page 1
IGBT MODULE ( N series ) n n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current ...
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Collector current vs. Collector-Emitter voltage T =25°C j 250 V =20V,15V,12V,10V GE 200 150 100 Collector-Emitter voltage : V Collector-Emitter vs. Gate-Emitter voltage T =25° ...
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Switching Time vs =600V, I =100A, V =±15V 1000 100 10 Gate Resistance : R Forward Current vs. Forward Voltage V =0V GE 250 T =125°C 25°C j 200 150 100 ...
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... E 25° 25° 125° 25°C rr 150 200 [A] C Fuji Electric (UK) Ltd. Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 Capacitance vs. Collector-Emitter voltage T =25° ...