NTNS3A65PZ ON Semiconductor, NTNS3A65PZ Datasheet - Page 4

• Manufacturer Part Number: NTNS3A65PZ
• Description: Small Signal MOSFET
• Manufacturer: ON Semiconductor

1000
0.90
0.80
0.70
0.60
0.50
0.40
100
80
75
70
65
60
55
50
45
40
35
30
25
20
15
10
10
5
0
−50
0
1
C
Figure 9. Resistive Switching Time Variation
rss
C
C
T
2
−25
iss
oss
J
, STARTING JUNCTION TEMPERATURE (°C)
−V
DS
Figure 7. Capacitance Variation
4
Figure 11. Threshold Voltage
, DRAIN−TO−SOURCE VOLTAGE (V)
0
R
G
vs. Gate Resistance
6
, GATE RESISTANCE (W)
I
D
= −250 mA
25
8
t
t
d(off)
d(on)
t
t
f
r
50
10
10
12
75
14
100
TYPICAL CHARACTERISTICS
V
V
DD
GS
T
V
16
f = 1 MHz
= −10 V
= −4.5 V
J
GS
= 25°C
125
= 0 V
http://onsemi.com
18
NTNS3A65PZ
150
100
20
4
5
4
3
2
1
0
www.DataSheet.net/
1.000
0.100
0.010
0.001
10.0
0
1.0
0.1
Q
Figure 8. Gate−to−Source Voltage vs. Total
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
0.6
0.1
gs
Figure 10. Diode Forward Voltage vs. Current
V
Single Pulse
T
R
Thermal Limit
Package Limit
Figure 12. Maximum Rated Forward Biased
C
GS
DS(on)
= 25°C
T
V
≤ −8 V
−V
−V
Q
J
0.7
Q
DS
= 25°C
g
gd
SD
Limit
DS
, TOTAL GATE CHARGE (nC)
, SOURCE−TO−DRAIN VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
0.8
Safe Operating Area
1
T
Charge
Q
J
T
= 125°C
0.9
T
1.0
J
V
= −55°C
GS
V
I
T
D
DS
J
10
= −0.2 V
= 25°C
1.1
= −10 V
100 ms
10 ms
10 ms
1 ms
dc
1.1 1.2
1.2
12
10
8
6
4
2
0
100
1.3
Datasheet pdf - http://www.DataSheet4U.co.kr/