NTNS3A65PZ ON Semiconductor, NTNS3A65PZ Datasheet - Page 3

• Manufacturer Part Number: NTNS3A65PZ
• Description: Small Signal MOSFET
• Manufacturer: ON Semiconductor

1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.0
1.0
−50
−3.5 V
−3 V
T
−4.0 V
J
Figure 3. On−Resistance vs. Gate Voltage
= 25°C
V
Figure 5. On−Resistance Variation with
−25
GS
Figure 1. On−Region Characteristics
−V
1.5
−V
0.5
DS
= −4.5
GS
T
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
2.0
1.0
25
Temperature
2.5
1.5
50
3.0
−2.5 V
V
I
D
GS
75
= −200 mA
2.0
= −4.5 V
−1.8 V
−1.5 V
−1.2 V
−2 V
3.5
V
I
TYPICAL CHARACTERISTICS
D
GS
T
I
100
= −50 mA
D
J
= −200 mA
= −1.8 V
= 25°C
2.5
4.0
http://onsemi.com
125
NTNS3A65PZ
150
3.0
4.5
3
www.DataSheet.net/
1000
100
0.9
0.8
0.7
0.5
0.4
0.3
0.2
0.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
0.6
0.1
10
0.0
2
0
Figure 4. On−Resistance vs. Drain Current and
V
V
Figure 6. Drain−to−Source Leakage Current
DS
GS
0.1
4
= −5 V
= 0 V
−V
−V
Figure 2. Transfer Characteristics
0.5
0.2
DS
GS
6
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
−I
0.3
V
D
GS
, DRAIN CURRENT (A)
8
1
Gate Voltage
= −1.8 V
0.4
vs. Voltage
T
J
T
10
T
= 25°C
J
J
V
0.5
= 125°C
= 85°C
GS
1.5
T
12
J
= −1.5 V
0.6
= 125°C
V
14
GS
2
V
0.7
T
GS
J
= −2.5 V
= −55°C
= −4.5 V
16
0.8
T
J
2.5
= 25°C
0.9
18
1.0
20
3
Datasheet pdf - http://www.DataSheet4U.co.kr/